MT53B512M64D4NK-062 WT ES:C
| Part Description |
IC DRAM 32GBIT 1.6GHZ 366WFBGA |
|---|---|
| Quantity | 1,127 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 366-WFBGA (15x15) | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 1.6 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | 366-WFBGA | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 512M x 64 | ||
| Moisture Sensitivity Level | 1 (Unlimited) | RoHS Compliance | N/A | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | OBSOLETE | HTS Code | N/A |
Overview of MT53B512M64D4NK-062 WT ES:C – IC DRAM 32GBIT 1.6GHZ 366WFBGA
The MT53B512M64D4NK-062 WT ES:C is a 32 Gbit volatile SDRAM device based on Mobile LPDDR4 technology. It provides a 512M × 64 memory organization with a 1.6 GHz clock frequency and operates from a 1.1 V supply.
Targeted at systems requiring high-density, low-voltage LPDDR4 memory in a compact package, this device offers a small 366‑WFBGA (15×15) footprint and an operating temperature range of −30°C to 85°C (TC).
Key Features
- Core Memory Technology Mobile LPDDR4 SDRAM providing volatile DRAM storage with a 512M × 64 organization for 32 Gbit capacity.
- Clock and Performance 1.6 GHz clock frequency to support high-speed memory transactions within device capabilities.
- Power Low-voltage operation at 1.1 V to support power-sensitive designs.
- Package 366‑WFBGA package in a 15×15 mm footprint, enabling compact board-level integration.
- Temperature Range Rated for operation from −30°C to 85°C (TC) to accommodate a range of environmental conditions.
Typical Applications
- Mobile and Handheld Devices High-density LPDDR4 memory for systems that require compact, low-voltage DRAM in a small package.
- Embedded Systems On-board memory for embedded designs needing 32 Gbit capacity and a 15×15 mm package footprint.
- High-Density Memory Modules Integration into memory modules or modules-on-board where 512M × 64 organization and LPDDR4 technology are required.
Unique Advantages
- High Memory Density: 32 Gbit capacity in a single device reduces the number of components needed to achieve large memory pools.
- Compact Package: 366‑WFBGA (15×15) enables smaller PCB area for dense system designs.
- Low Voltage Operation: 1.1 V supply supports reduced power consumption in battery-powered or energy-constrained applications.
- Industry-Standard LPDDR4: Mobile LPDDR4 technology provides a familiar DRAM architecture for designs using LPDDR4 memory.
- Extended Operating Range: −30°C to 85°C (TC) rating supports deployments across varied thermal environments.
Why Choose IC DRAM 32GBIT 1.6GHZ 366WFBGA?
This Micron LPDDR4 DRAM device balances high-density memory capacity with low-voltage operation and a compact WFBGA package, making it suitable for designs that require sizable on-board DRAM without a large PCB footprint. Its 1.6 GHz clock frequency and 512M × 64 organization provide the capacity and speed characteristics expected from LPDDR4 devices.
Choose this device for designs that prioritize memory density, compact integration, and operation within a −30°C to 85°C temperature window. Its specification set supports scalable memory implementation in mobile, handheld, and embedded systems.
Request a quote or submit an inquiry for pricing and availability to receive further purchasing and lead-time information.
