MT53B512M64D4NK-062 WT:B TR

The MT53B512M64D4NK-062 WT:B TR is a 32 Gbit volatile DRAM device implemented in Mobile LPDDR4 SDRAM technology. It is organized as 512M × 64 and operates with a 1.6 GHz clock frequency.

This device is intended for designs requiring high-density, high-speed mobile DRAM in a compact 366‑WFBGA (15 × 15 mm) package, with an operating temperature range of −30°C to 85°C and a 1.1 V supply voltage.

Key Features

• Memory Technology  Mobile LPDDR4 SDRAM providing volatile DRAM memory in a modern mobile SDRAM architecture.
• Density & Organization  32 Gbit capacity organized as 512M × 64, enabling high-density memory configurations in a single device.
• Clock Frequency  Operates at a 1.6 GHz clock frequency for timing and performance characteristics associated with the specified speed.
• Power  Designed to operate from a 1.1 V supply voltage, matching the device's specified power requirement.
• Package  Supplied in a 366‑WFBGA (15 × 15 mm) package for surface-mount integration in space-constrained assemblies.
• Temperature Range  Specified operating temperature of −30°C to 85°C (TC), suitable for a range of commercial and industrial ambient conditions.

Typical Applications

• Mobile devices  Used as high-density LPDDR4 memory in handheld and mobile system designs that require compact package options and 1.6 GHz operation.
• Embedded systems  Integration where a 32 Gbit volatile DRAM is needed for system memory in embedded platforms within the specified temperature range.
• Compact consumer electronics  Fits applications that require a small 15 × 15 mm 366‑WFBGA package and LPDDR4 memory capacity.

Unique Advantages

• Large single-device capacity: 32 Gbit density in a single package reduces the need for multiple DRAM components when higher memory is required.
• Speed-matched for LPDDR4: 1.6 GHz clock frequency aligns with the device's Mobile LPDDR4 technology for its intended operating profile.
• Compact package footprint: 366‑WFBGA (15 × 15 mm) package enables high-density system layouts in constrained board space.
• Low-voltage operation: Operates at 1.1 V supply voltage, consistent with the device's specified power requirement.
• Wide operating temperature: Rated from −30°C to 85°C (TC) to support designs across a range of ambient conditions.

Why Choose IC DRAM 32GBIT 1.6GHZ 366WFBGA?

This MT53B512M64D4NK-062 WT:B TR device positions itself as a high-density LPDDR4 memory option combining a 32 Gbit capacity, 1.6 GHz clocking, and a compact 366‑WFBGA package. It is suited to designs that require a single-device memory solution with defined voltage and temperature characteristics.

Engineers and procurement teams selecting this device can rely on its explicit specifications—memory organization, operating frequency, supply voltage, package size, and operating temperature—for predictable integration and system planning.

For pricing, availability, or to request a quote for MT53B512M64D4NK-062 WT:B TR, please contact our sales team or submit a quote request through the available procurement channels.