MT53B512M64D4NW-062 WT:C TR
| Part Description |
IC DRAM 32GBIT 1.6GHZ FBGA |
|---|---|
| Quantity | 606 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | N/A | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 1.6 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | N/A | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 512M x 64 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0036 |
Overview of MT53B512M64D4NW-062 WT:C TR – IC DRAM 32GBIT 1.6GHZ FBGA
The MT53B512M64D4NW-062 WT:C TR is a 32 Gbit volatile DRAM device based on Mobile LPDDR4 SDRAM technology. It provides a 512M × 64 memory organization and operates at a clock frequency of 1.6 GHz.
This device targets systems requiring high-density LPDDR4 volatile memory with a 1.1 V supply and an operating temperature range of -30°C to 85°C (TC).
Key Features
- Memory Type Volatile DRAM implemented with Mobile LPDDR4 technology.
- Capacity and Organization 32 Gbit total capacity organized as 512M × 64 bits for wide-data applications.
- Performance Rated clock frequency of 1.6 GHz to support high-speed memory transactions.
- Power Single-supply operation at 1.1 V.
- Operating Temperature Specified operating range of -30°C to 85°C (TC).
- Package / Format Supplied as an FBGA DRAM device (as indicated in the product descriptor).
Typical Applications
- Mobile devices – Designed for systems using Mobile LPDDR4 memory where high-density, volatile storage is required.
- High-density memory subsystems – Acts as a 32 Gbit memory component in designs that require a 512M × 64 organization and 1.6 GHz operation.
- Embedded computing platforms – Provides volatile DRAM capacity for embedded designs operating within the specified temperature and voltage range.
Unique Advantages
- High memory density: 32 Gbit capacity enables integration of large volatile memory within a single device.
- Wide data organization: 512M × 64 configuration supports wide data-path implementations.
- High-frequency operation: 1.6 GHz clock frequency supports demanding memory throughput requirements where specified.
- Low-voltage operation: 1.1 V supply reduces system power at the device level where applicable.
- Extended temperature range: Rated for -30°C to 85°C (TC) to cover a broad set of thermal environments.
- Mobile LPDDR4 technology: Implements LPDDR4 SDRAM architecture for designs specifying that memory technology.
Why Choose MT53B512M64D4NW-062 WT:C TR?
Manufactured by Micron Technology Inc., the MT53B512M64D4NW-062 WT:C TR offers a 32 Gbit LPDDR4 volatile memory option with a 512M × 64 organization and 1.6 GHz clock capability. Its 1.1 V supply and specified operating temperature range of -30°C to 85°C make it suitable for designs that require sizable DRAM capacity and defined environmental tolerance.
This device is appropriate for engineers and procurement teams integrating high-density LPDDR4 DRAM into systems where the provided electrical, organizational, and thermal specifications align with design requirements.
Request a quote or submit an inquiry to receive pricing and availability information for the MT53B512M64D4NW-062 WT:C TR.
