MT53B512M64D4NK-053 WT ES:C
| Part Description |
IC DRAM 32GBIT 1.866GHZ 366WFBGA |
|---|---|
| Quantity | 1,109 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 366-WFBGA (15x15) | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 1.866 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | 366-WFBGA | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 512M x 64 | ||
| Moisture Sensitivity Level | 1 (Unlimited) | RoHS Compliance | Unknown | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | OBSOLETE | HTS Code | N/A |
Overview of MT53B512M64D4NK-053 WT ES:C – IC DRAM 32GBIT 1.866GHZ 366WFBGA
The MT53B512M64D4NK-053 WT ES:C is a 32 Gbit volatile DRAM device implemented in Mobile LPDDR4 SDRAM technology. It is organized as 512M × 64 and specified for operation at a clock frequency of 1.866 GHz.
This device targets designs that require high-density LPDDR4 memory in a compact 366-WFBGA package, with a 1.1 V supply and an operating temperature range of -30°C ~ 85°C (TC).
Key Features
- Memory Technology & Type Mobile LPDDR4 SDRAM; volatile DRAM format suitable for LPDDR4 system implementations.
- Capacity & Organization 32 Gbit total capacity, organized as 512M × 64 for wide-data memory configurations.
- Clock Frequency Rated for operation at 1.866 GHz.
- Voltage Low-voltage 1.1 V supply requirement.
- Package 366-WFBGA footprint, listed as 15×15.
- Temperature Range Specified operating range −30°C ~ 85°C (TC).
Typical Applications
- Mobile devices — Memory subsystem for designs leveraging Mobile LPDDR4 technology where 32 Gbit capacity and 1.866 GHz operation are required.
- Portable electronics — High-density DRAM for compact form-factor products that need LPDDR4 memory in a 366-WFBGA package.
- Embedded systems — On-board high-capacity volatile memory for embedded designs targeting LPDDR4 signaling and 1.1 V supply domains.
Unique Advantages
- High density 32 Gbit capacity: Supports large memory footprints through a 512M × 64 organization.
- High clock capability: Rated for 1.866 GHz operation to meet system timing targets defined for this frequency.
- Low supply voltage: 1.1 V supply reduces power-supply overhead for LPDDR4 domains.
- Compact WFBGA package: 366-WFBGA (15×15) enables integration into space-constrained PCBs.
- Extended operating temperature: −30°C ~ 85°C (TC) supports a range of thermal environments.
Why Choose MT53B512M64D4NK-053 WT ES:C?
The MT53B512M64D4NK-053 WT ES:C provides a high-density LPDDR4 DRAM option from Micron Technology Inc., combining 32 Gbit capacity with 1.866 GHz operation and a 1.1 V supply. Its 366-WFBGA package and specified temperature range make it suitable for compact systems that require LPDDR4 memory implemented at this capacity and frequency.
This device is appropriate for designers and procurement teams specifying LPDDR4 memory where verified electrical characteristics (capacity, organization, clock frequency, supply voltage, and package) are primary selection criteria.
If you need pricing, availability, or a formal quote for MT53B512M64D4NK-053 WT ES:C, please request a quote or contact sales to submit an inquiry.
