MT53B1024M64D8PM-062 WT:D TR

The MT53B1024M64D8PM-062 WT:D TR is a volatile DRAM device implemented in Mobile LPDDR4 SDRAM architecture. It provides a 64 Gbit memory capacity arranged as 1G × 64 with a specified clock frequency of 1.6 GHz and a supply voltage of 1.1 V.

This device is targeted at designs requiring a compact, high-density mobile LPDDR4 memory element across a broad operating temperature range, offering integration suited to mobile and embedded memory subsystems.

Key Features

• Core Architecture Mobile LPDDR4 SDRAM architecture delivering the device's operational protocol and timing characteristics.
• Memory Capacity & Organization 64 Gbit total memory organized as 1G × 64, enabling a 64-bit data width for system memory buses that support this organization.
• Clock Performance Rated clock frequency of 1.6 GHz for synchronous DRAM operation.
• Power 1.1 V supply voltage defined for device operation.
• Volatility Volatile DRAM memory type intended for temporary data storage in runtime systems.
• Operating Temperature Specified operating temperature range of −30°C to 85°C (TC).

Typical Applications

• Mobile Devices — Memory subsystem component for mobile platforms using LPDDR4 architecture where 64 Gbit density and 1.6 GHz clocking are required.
• Embedded Systems — High-density volatile storage for embedded modules that leverage LPDDR4 memory organization and low-voltage operation.
• Consumer Electronics — Integration into compact electronics that require a 64 Gbit LPDDR4 DRAM element across a wide ambient temperature range.

Unique Advantages

• Large Memory Density: 64 Gbit capacity provides substantial on-board volatile storage within a single device.
• 64-bit Data Organization: 1G × 64 organization supports a wide data path for systems designed for 64-bit memory interfaces.
• High Clocking: 1.6 GHz rated clock frequency supports designs that require faster synchronous DRAM timing.
• Low-Voltage Operation: 1.1 V supply supports lower-voltage memory designs and can contribute to reduced power draw compared to higher-voltage alternatives.
• Extended Temperature Range: −30°C to 85°C operating range accommodates a variety of environmental conditions.
• Mobile LPDDR4 Standard: Built on Mobile LPDDR4 SDRAM architecture for compatibility with systems targeting that memory class.

Why Choose IC DRAM 64GBIT 1.6GHZ?

The MT53B1024M64D8PM-062 WT:D TR positions itself as a high-density Mobile LPDDR4 DRAM device combining 64 Gbit capacity with a 1.6 GHz clock rate and 1.1 V operation. Its 1G × 64 organization and specified operating temperature range make it suitable for designs that need substantial volatile memory in a low-voltage mobile LPDDR4 form.

This part is well-suited for designers and procurement teams specifying LPDDR4 memory elements for mobile and embedded platforms where capacity, data width, and defined electrical and thermal operating points are the primary selection criteria.

For pricing, lead time, or to request a quote for MT53B1024M64D8PM-062 WT:D TR, please request a quote or contact sales for further assistance and availability details.