MT53D1024M32D4DT-046 AAT ES:D

IC DRAM 32GBIT 2.133GHZ 200VFBGA
Part Description

IC DRAM 32GBIT 2.133GHZ 200VFBGA

Quantity 653 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusActive
Manufacturer Standard Lead Time28 Weeks
Datasheet

Specifications & Environmental

Device Package200-VFBGA (10x14.5)Memory FormatDRAMTechnologySDRAM - Mobile LPDDR4
Memory Size32 GbitAccess TimeN/AGradeAutomotive
Clock Frequency2.133 GHzVoltage1.1VMemory TypeVolatile
Operating Temperature-40°C ~ 105°C (TC)Write Cycle Time Word PageN/APackaging200-VFBGA
Mounting MethodVolatileMemory InterfaceN/AMemory Organization1G x 32
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceN/AREACH ComplianceREACH Unaffected
QualificationAEC-Q100ECCNEAR99HTS Code8542.32.0036

Overview of MT53D1024M32D4DT-046 AAT ES:D – IC DRAM 32 Gbit LPDDR4 2.133 GHz

The MT53D1024M32D4DT-046 AAT ES:D is a volatile SDRAM device based on Mobile LPDDR4 technology, offering 32 Gbit of memory organized as 1G × 32. It operates at a clock frequency of 2.133 GHz and uses a 1.1 V supply.

This device is specified for automotive-grade applications with AEC-Q100 qualification and an operating temperature range of -40°C to 105°C (TC). Its compact 200-VFBGA (10 × 14.5 mm) package supports space-constrained system designs requiring high-speed memory.

Key Features

  • Core / Memory Mobile LPDDR4 SDRAM architecture; 32 Gbit capacity organized as 1G × 32 for high-density memory integration.
  • Performance 2.133 GHz clock frequency to support high-speed memory access patterns.
  • Power 1.1 V supply voltage consistent with LPDDR4 low-voltage operation.
  • Package 200-VFBGA package case in a 10 × 14.5 mm footprint, enabling compact board-level integration.
  • Temperature Range Rated for operation from -40°C to 105°C (TC), suitable for wide-temperature environments.
  • Qualification & Grade AEC-Q100 qualification and automotive grade designation for use in regulated automotive applications.
  • Memory Type & Format Volatile DRAM memory format optimized for temporary data storage in high-bandwidth systems.

Typical Applications

  • Automotive Systems Automotive ECUs and infotainment platforms that require AEC-Q100-qualified high-speed memory within a wide operating temperature range.
  • Mobile Devices Mobile and handheld platforms leveraging Mobile LPDDR4 where low-voltage, high-frequency memory is needed.
  • Embedded Systems Compact embedded designs that benefit from a 200-VFBGA package for space-constrained board layouts.
  • High-Bandwidth Memory Subsystems Systems requiring high-speed DRAM organized as 1G × 32 for parallel data throughput.

Unique Advantages

  • High-speed operation: 2.133 GHz clock frequency supports demanding memory access requirements.
  • Automotive qualification: AEC-Q100 qualification and automotive grade rating align the device with regulated automotive usage.
  • Low-voltage supply: 1.1 V operation reduces power rail complexity in LPDDR4 system designs.
  • Wide temperature capability: -40°C to 105°C (TC) rating enables deployment in harsh thermal environments.
  • Compact package footprint: 200-VFBGA (10 × 14.5 mm) supports high-density board layouts and space-constrained assemblies.

Why Choose MT53D1024M32D4DT-046 AAT ES:D?

The MT53D1024M32D4DT-046 AAT ES:D positions itself as a high-density LPDDR4 memory component that combines high-frequency operation with automotive-grade qualification. Its 32 Gbit organization, 2.133 GHz clocking, and 1.1 V supply make it suitable for designs that require fast, low-voltage volatile memory in compact packages.

This device is suited for engineers and procurement teams designing mobile and automotive systems where verified temperature range, AEC-Q100 qualification, and a compact 200-VFBGA footprint are required for long-term deployment and integration.

Request a quote or contact sales to discuss availability, lead times, and pricing for the MT53D1024M32D4DT-046 AAT ES:D.

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