MT53D1024M32D4DT-046 AAT:E
| Part Description |
IC DRAM 32GBIT 2.133GHZ 200VFBGA |
|---|---|
| Quantity | 887 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 200-VFBGA (10x14.5) | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Automotive | ||
| Clock Frequency | 2.133 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 105°C (TC) | Write Cycle Time Word Page | N/A | Packaging | 200-VFBGA | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 1G x 32 | ||
| Moisture Sensitivity Level | 1 (Unlimited) | RoHS Compliance | Unknown | REACH Compliance | REACH Unknown | ||
| Qualification | AEC-Q100 | ECCN | EAR99 | HTS Code | 8542.32.0036 |
Overview of MT53D1024M32D4DT-046 AAT:E – IC DRAM 32GBIT 2.133GHZ 200VFBGA
The MT53D1024M32D4DT-046 AAT:E is a 32 Gbit volatile DRAM device implemented as Mobile LPDDR4 SDRAM. It provides a high-density 1G x 32 memory organization with a 2.133 GHz clock frequency in a compact 200‑VFBGA package.
Designed for systems that require high data rate memory and extended environmental tolerance, the device combines high capacity, low-voltage operation and automotive-level qualification for use in demanding embedded and automotive applications.
Key Features
- Core / Memory Architecture Mobile LPDDR4 SDRAM in a 1G × 32 organization delivering 32 Gbit of volatile DRAM capacity.
- Performance 2.133 GHz clock frequency for high data-rate memory operation.
- Power 1.1 V supply voltage specified for the device.
- Package 200‑VFBGA package (10 × 14.5 mm) providing a compact footprint for high-density board layouts.
- Temperature and Qualification Operating temperature range −40°C to 105°C (TC) and AEC‑Q100 qualification for automotive-grade reliability.
Typical Applications
- Automotive Systems Memory for automotive electronics where AEC‑Q100 qualification and extended temperature range are required.
- Mobile and Handheld Devices High-density LPDDR4 memory for mobile platforms that need a compact package and high data rates.
- Embedded High-Performance Modules Onboard DRAM for embedded systems requiring 32 Gbit capacity and 2.133 GHz operation.
Unique Advantages
- High-density 32 Gbit capacity: Supports larger memory footprints in a single-die LPDDR4 device.
- High data-rate operation: 2.133 GHz clock frequency enables higher throughput for memory-intensive tasks.
- Low-voltage operation: 1.1 V supply supports designs targeting reduced power delivery requirements.
- Compact VFBGA package: 200‑VFBGA (10×14.5 mm) provides a small board footprint for space-constrained designs.
- Automotive-grade reliability: AEC‑Q100 qualification and −40°C to 105°C operating range address demanding environmental requirements.
Why Choose IC DRAM 32GBIT 2.133GHZ 200VFBGA?
The MT53D1024M32D4DT-046 AAT:E positions itself as a high-capacity, high-speed LPDDR4 DRAM option with automotive-grade qualification and extended temperature capability. Its combination of 32 Gbit density, 2.133 GHz operation and 1.1 V supply makes it suitable where performance and power efficiency must be balanced within a compact package.
This device is well suited for designers of automotive and embedded systems that require a reliable, high-throughput memory building block capable of operating across a wide temperature range while maintaining a small PCB footprint.
Request a quote or submit a pricing inquiry to obtain availability and lead-time information for MT53D1024M32D4DT-046 AAT:E.
