MT53D1024M32D4DT-046 AUT:D TR

The MT53D1024M32D4DT-046 AUT:D TR is a 32 Gbit volatile DRAM device implemented in Mobile LPDDR4 SDRAM technology. It provides a 1G x 32 memory organization with a 2.133 GHz clock frequency and operates from a 1.1 V supply.

This device targets high-density, high-speed memory requirements and is offered in a 200-ball very fine pitch BGA (10 × 14.5 mm) package. It carries AEC-Q100 qualification and an operating temperature range of -40°C to 125°C.

Key Features

• Core / Memory Architecture Mobile LPDDR4 SDRAM technology with a memory organization of 1G × 32 and a total memory size of 32 Gbit.
• High-Speed Operation Specified clock frequency of 2.133 GHz for high-throughput memory access.
• Power Operates from a 1.1 V supply voltage as specified for LPDDR4 operation.
• Package Supplied in a 200-VFBGA package (10 × 14.5 mm) suitable for surface-mount assembly.
• Temperature & Qualification Qualified to AEC-Q100 with an operating temperature range of -40°C to 125°C (TC), supporting deployment in demanding thermal environments.
• Memory Format Volatile DRAM suitable for high-density system memory applications.

Typical Applications

• Automotive systems AEC-Q100 qualification and wide temperature range make the device suitable for in-vehicle electronic systems requiring high-density, high-speed memory.
• Mobile and embedded devices Mobile LPDDR4 architecture and 1.1 V operation address compact, energy-conscious embedded memory designs.
• High-density memory modules 32 Gbit capacity in a 200-VFBGA package supports designs where board area and memory density are primary considerations.

Unique Advantages

• High memory density: 32 Gbit capacity delivered in a compact 200-VFBGA (10 × 14.5 mm) package reduces system board area for high-density designs.
• High-speed throughput: 2.133 GHz clock frequency enables faster memory transactions for bandwidth-sensitive applications.
• Automotive qualification: AEC-Q100 qualification provides a documented level of reliability suitable for automotive-grade applications.
• Wide operating temperature: Rated from -40°C to 125°C (TC), enabling operation across extended temperature ranges.
• LPDDR4 power profile: 1.1 V supply aligns with LPDDR4 mobile power requirements for integration into low-voltage system architectures.

Why Choose MT53D1024M32D4DT-046 AUT:D TR?

The MT53D1024M32D4DT-046 AUT:D TR positions itself as a high-density, high-speed LPDDR4 memory component with explicit automotive qualification and an extended temperature range. Its combination of 32 Gbit capacity, 2.133 GHz operation, and 1.1 V supply makes it suitable for designs that require compact, high-throughput volatile memory.

This device is suited to engineering teams and procurement teams specifying automotive-grade or mobile LPDDR4 memory where long-term reliability, thermal range, and board-area efficiency are priorities.

Request a quote or contact sales for pricing, availability, and lead-time information for the MT53D1024M32D4DT-046 AUT:D TR.