MT53D1024M32D4DT-053 AAT:D

The MT53D1024M32D4DT-053 AAT:D is a 32 Gbit Mobile LPDDR4 DRAM device in a 200‑VFBGA (10 × 14.5 mm) package. It implements a 1G × 32 memory organization and operates with a 1.1 V supply, providing high‑density, low‑voltage volatile memory.

Targeted at applications requiring high data rates and extended temperature operation, the device combines a 1.866 GHz clock frequency (DDR4‑3732 data rate) with automotive‑grade qualification (AEC‑Q100) and a -40 °C to +105 °C operating range.

Key Features

• Memory Core  LPDDR4 SDRAM technology with 32 Gbit density organized as 1G × 32 for high capacity in a single die.
• Performance  Clock frequency of 1.866 GHz and listed data rate DDR4‑3732 to support high‑bandwidth memory transfers.
• Power  Low‑voltage operation at 1.1 V to reduce system power consumption relative to higher‑voltage DRAM options.
• Automotive Qualification & Temperature  AEC‑Q100 qualification with an operating temperature range of -40 °C to +105 °C (TC), suitable for designs requiring automotive‑grade reliability.
• Package  200‑VFBGA package (10 × 14.5 mm) for compact board integration where board space is constrained.
• Compliance & Documentation  Part‑specific RoHS and China RoHS certificates and a REACH statement are available, along with simulation models (HSPICE, IBIS) and technical notes referenced in the product documentation.

Typical Applications

• Automotive systems  Automotive‑grade LPDDR4 memory for in‑vehicle compute and infotainment modules that require extended temperature support and AEC‑Q100 qualification.
• Mobile devices  High‑density, low‑voltage mobile LPDDR4 memory for handheld and mobile computing platforms demanding high bandwidth.
• Embedded computing  Compact 200‑VFBGA package and 32 Gbit capacity for embedded designs where board area and power efficiency are critical.

Unique Advantages

• High memory density: 32 Gbit capacity in a single LPDDR4 device reduces the need for multiple parts and saves PCB space.
• High bandwidth: 1.866 GHz clock and DDR4‑3732 data rate enable fast data throughput for bandwidth‑sensitive workloads.
• Low‑voltage operation: 1.1 V supply lowers power draw for energy‑constrained systems.
• Automotive‑grade qualification: AEC‑Q100 qualification and a wide operating temperature range support reliable deployment in demanding environments.
• Compact packaging: 200‑VFBGA (10 × 14.5 mm) footprint supports dense board integration and space‑limited designs.
• Documentation & modeling resources: Availability of RoHS/REACH certification, HSPICE and IBIS models, and technical notes simplifies characterization and system validation.

Why Choose IC DRAM 32GBIT 1.866GHZ 200VFBGA?

The MT53D1024M32D4DT-053 AAT:D delivers a combination of high density, high data rate and low‑voltage operation in an automotive‑qualified LPDDR4 package. Its 32 Gbit capacity, 1.866 GHz clocking (DDR4‑3732), 1.1 V supply and AEC‑Q100 qualification make it suitable for designers who require robust, high‑bandwidth memory in constrained form factors and extended temperature environments.

Supported by part‑specific compliance documentation, simulation models and technical notes, the device is positioned for long‑term use in automotive and mobile/embedded systems where reliable, high‑capacity volatile memory is required.

Request a quote or submit an inquiry to obtain pricing, lead time and ordering information for the MT53D1024M32D4DT-053 AAT:D.