MT53D1024M32D4DT-046 WT:D TR
| Part Description |
IC DRAM 32GBIT 2.133GHZ 200VFBGA |
|---|---|
| Quantity | 23 Available (as of May 6, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 200-VFBGA (10x14.5) | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 2.133 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | 200-VFBGA | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 1G x 32 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0036 |
Overview of MT53D1024M32D4DT-046 WT:D TR – IC DRAM 32GBIT 2.133GHZ 200VFBGA
The MT53D1024M32D4DT-046 WT:D TR is a 32 Gbit volatile DRAM device implementing Mobile LPDDR4 SDRAM technology. Manufactured by Micron Technology Inc., it provides high-speed memory operation at a 2.133 GHz clock frequency in a compact 200‑VFBGA package.
This device targets designs that require dense, high-frequency volatile memory with a 1.1 V supply and an operating temperature range of −30 °C to 85 °C.
Key Features
- Core / Technology
Mobile LPDDR4 SDRAM architecture delivering volatile DRAM operation suitable for high-speed memory applications. - Memory Capacity & Organization
32 Gbit density organized as 1G × 32 to provide a single-die high-density memory option. - Performance
Clock frequency of 2.133 GHz for high-bandwidth memory access. - Power
1.1 V supply voltage for low-voltage operation typical of LPDDR4 devices. - Package
200‑VFBGA supplier device package (10 × 14.5 mm) for compact board-level integration. - Temperature Range
Rated for operation from −30 °C to 85 °C (TC).
Typical Applications
- Mobile devices
High-speed volatile memory for mobile device designs leveraging LPDDR4 operation at 2.133 GHz. - Compact portable electronics
Provides 32 Gbit density in a 200‑VFBGA package where board space and low voltage (1.1 V) are constrained. - Thermally varied environments
Suitable for systems that require operation across a −30 °C to 85 °C temperature range.
Unique Advantages
- High density in a single device: 32 Gbit organized as 1G × 32 reduces the need for multiple chips to achieve large memory capacity.
- High-frequency operation: 2.133 GHz clock frequency enables fast memory access for bandwidth-sensitive tasks.
- Low-voltage operation: 1.1 V supply supports lower power consumption compared to higher-voltage memory alternatives.
- Compact package: 200‑VFBGA (10 × 14.5 mm) simplifies integration into space-constrained PCBs.
- Extended operating temperature: −30 °C to 85 °C rating supports deployment in varied thermal environments.
- Mobile LPDDR4 technology: Designed around LPDDR4 SDRAM architecture for applications targeting mobile memory requirements.
Why Choose MT53D1024M32D4DT-046 WT:D TR?
The MT53D1024M32D4DT-046 WT:D TR combines 32 Gbit density, 2.133 GHz LPDDR4 operation, and a 1.1 V supply in a compact 200‑VFBGA package, making it suitable for designs that require high-density, high-speed volatile memory in a small footprint. Its −30 °C to 85 °C operating range aligns with systems that need reliable performance across a range of ambient temperatures.
This device is appropriate for engineers and procurement teams specifying mobile LPDDR4 DRAM where capacity, frequency, and low-voltage operation are primary selection criteria.
Request a quote or contact sales to discuss availability, pricing, and lead times for the MT53D1024M32D4DT-046 WT:D TR.
