MT53D1024M32D4DT-046 WT:D
| Part Description |
IC DRAM 32GBIT 2.133GHZ 200VFBGA |
|---|---|
| Quantity | 634 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 200-VFBGA (10x14.5) | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 2.133 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | 200-VFBGA | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 1G x 32 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0036 |
Overview of MT53D1024M32D4DT-046 WT:D – 32Gbit LPDDR4 SDRAM, 2.133 GHz, 200-VFBGA
The MT53D1024M32D4DT-046 WT:D is a 32 Gbit volatile memory device implemented as mobile LPDDR4 SDRAM. It provides a 1G × 32 memory organization with high-speed 2.133 GHz clock operation in a 200-ball VFBGA package.
This device targets designs that require high-density, high-bandwidth DRAM integration with a 1.1 V supply and a specified operating temperature range of −30°C to 85°C (TC).
Key Features
- Core / Technology Mobile LPDDR4 SDRAM architecture; volatile DRAM memory format suited to high-speed transient storage.
- Memory Capacity & Organization 32 Gbit total density arranged as 1G × 32, providing wide data paths for throughput-oriented designs.
- Performance 2.133 GHz clock frequency for high-bandwidth operation as specified in the product data.
- Power Single supply voltage of 1.1 V as listed in the specifications.
- Package 200-ball VFBGA package (10 × 14.5 mm) for high-density board-level integration.
- Operating Temperature Specified temperature range of −30°C to 85°C (TC) for thermal planning and system design.
Unique Advantages
- High memory density: 32 Gbit capacity supports designs requiring large DRAM storage within a single device.
- High-bandwidth operation: 2.133 GHz clock frequency enables faster data transfer rates where specified timing is required.
- Compact package footprint: 200-VFBGA (10×14.5 mm) package allows dense PCB placement and integration.
- Low-voltage supply: 1.1 V operation aligns with modern low-voltage system architectures.
- Extended operating temperature: −30°C to 85°C (TC) rating supports a range of thermal environments.
Why Choose MT53D1024M32D4DT-046 WT:D?
The MT53D1024M32D4DT-046 WT:D combines a high 32 Gbit memory capacity with 2.133 GHz LPDDR4 operation in a compact 200-VFBGA package, offering a clear option for designs that require integrated, high-bandwidth DRAM. Its 1G × 32 organization and 1.1 V supply make it suitable where wide data paths and low-voltage operation are specified.
This device is appropriate for engineering teams and procurement focused on achieving high-density memory integration with defined thermal and electrical characteristics, providing a straightforward specification match for systems requiring the listed voltage, frequency, package, and temperature range.
Request a quote or contact sales to discuss availability, pricing, and technical fit for your design requirements.
