MT53D1024M32D4DT-053 AIT ES:D
| Part Description |
IC DRAM 32GBIT 1.866GHZ 200VFBGA |
|---|---|
| Quantity | 375 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 200-VFBGA (10x14.5) | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Automotive | ||
| Clock Frequency | 1.866 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 95°C (TC) | Write Cycle Time Word Page | N/A | Packaging | 200-VFBGA | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 1G x 32 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | AEC-Q100 | ECCN | OBSOLETE | HTS Code | N/A |
Overview of MT53D1024M32D4DT-053 AIT ES:D – IC DRAM 32GBIT 1.866GHZ 200VFBGA
The MT53D1024M32D4DT-053 AIT ES:D is a 32 Gbit volatile DRAM device implemented in Mobile LPDDR4 SDRAM architecture with a 1G × 32 memory organization. It is designed for high-density memory applications requiring a 1.866 GHz clock frequency and a 1.1 V supply.
With AEC-Q100 qualification, a wide operating temperature range of -40°C to 95°C (TC), and a compact 200-VFBGA (10 × 14.5 mm) package, this device targets automotive and embedded applications where density, thermal range, and board-level integration are important.
Key Features
- Memory Core 32 Gbit capacity organized as 1G × 32; volatile DRAM implemented in Mobile LPDDR4 SDRAM technology.
- Performance 1.866 GHz clock frequency for high-speed memory operation suitable for bandwidth-intensive functions.
- Power 1.1 V supply voltage for low-voltage operation consistent with modern LPDDR4 designs.
- Reliability & Qualification AEC-Q100 qualification and an operating temperature range of -40°C to 95°C (TC) for use in demanding thermal environments.
- Package 200-VFBGA package (10 × 14.5 mm) supporting compact board integration and high-density placement.
Typical Applications
- Automotive systems — AEC-Q100 qualification and -40°C to 95°C operating range make this device suitable for automotive electronics requiring high-density DRAM.
- Mobile devices — Mobile LPDDR4 architecture and a 1.1 V supply align with mobile memory requirements for compact, low-voltage designs.
- Embedded systems — High-density 32 Gbit memory supports embedded controllers and systems that require large volatile memory pools in a small package.
Unique Advantages
- High-density memory capacity: 32 Gbit organized as 1G × 32 provides substantial volatile memory in a single device.
- High-speed operation: 1.866 GHz clock frequency supports bandwidth-sensitive applications.
- Automotive-grade qualification: AEC-Q100 certification and a wide temperature range support deployment in automotive environments.
- Low-voltage operation: 1.1 V supply enables integration into low-voltage system designs.
- Compact package: 200-VFBGA (10 × 14.5 mm) enables high-density board layouts and efficient space usage.
Why Choose MT53D1024M32D4DT-053 AIT ES:D?
The MT53D1024M32D4DT-053 AIT ES:D combines Mobile LPDDR4 architecture, a high 1.866 GHz clock rate, and a substantial 32 Gbit capacity to address designs that require high-density, high-speed volatile memory. Its 1.1 V supply and compact 200-VFBGA footprint support modern low-voltage and space-constrained implementations.
With AEC-Q100 qualification and an operating range of -40°C to 95°C, this device is positioned for automotive and robust embedded applications where thermal tolerance and reliability are required. It is suitable for engineers and procurement teams specifying high-density LPDDR4 DRAM for automotive, mobile, and embedded system designs.
Request a quote or contact sales for pricing, lead times, and availability for the MT53D1024M32D4DT-053 AIT ES:D.
