MT53D1024M32D4DT-053 WT:D
| Part Description |
IC DRAM 32GBIT 1.866GHZ 200VFBGA |
|---|---|
| Quantity | 499 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 200-VFBGA (10x14.5) | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 1.866 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | 200-VFBGA | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 1G x 32 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0036 |
Overview of MT53D1024M32D4DT-053 WT:D – IC DRAM 32GBIT 1.866GHZ 200VFBGA
The MT53D1024M32D4DT-053 WT:D is a 32 Gbit mobile LPDDR4 SDRAM device in a 200‑VFBGA package. It provides high-density volatile memory with a 1.866 GHz clock frequency and a 1.1 V supply target.
Designed for LPDDR4 memory implementations, this DRAM device delivers high data-rate operation and compact packaging for space-constrained system designs that require large memory capacity within a small footprint.
Key Features
- Memory Architecture 32 Gbit density organized as 1G × 32, implemented as SDRAM – Mobile LPDDR4.
- Performance 1.866 GHz clock frequency supporting high-rate memory transfers for LPDDR4 systems.
- Power Nominal 1.1 V supply voltage for LPDDR4-compatible power domains.
- Package 200‑VFBGA package; supplier device package specified as 200‑VFBGA (10x14.5).
- Operating Temperature Rated for −30°C to 85°C (TC), suitable for a range of commercial temperature conditions.
- Memory Type Volatile DRAM memory format intended for system-level volatile storage.
Typical Applications
- LPDDR4 system memory: Used as high-density DRAM in LPDDR4 memory subsystems requiring 32 Gbit capacity.
- Space-constrained designs: 200‑VFBGA package and high density enable large memory capacity where PCB area is limited.
- High-bandwidth memory needs: 1.866 GHz clock frequency supports designs that require elevated data rates within LPDDR4 specifications.
Unique Advantages
- High capacity in a compact package: 32 Gbit density in a 200‑VFBGA footprint reduces board area for large-memory designs.
- High data-rate operation: 1.866 GHz clock frequency supports increased memory throughput for demanding LPDDR4 applications.
- LPDDR4 power profile: 1.1 V supply aligns with LPDDR4 power domains for consistent system integration.
- Commercial temperature range: −30°C to 85°C rating supports deployments across a broad set of temperature conditions.
- Clear memory organization: 1G × 32 arrangement provides predictable interface and capacity planning for system architects.
Why Choose IC DRAM 32GBIT 1.866GHZ 200VFBGA?
The MT53D1024M32D4DT-053 WT:D positions itself as a high-density LPDDR4 DRAM option delivering 32 Gbit capacity, a 1.866 GHz clock rate, and a compact 200‑VFBGA package. These characteristics make it suitable for designs that require substantial volatile memory in constrained footprints while maintaining LPDDR4 power and signaling characteristics.
This device is appropriate for engineers and procurement teams specifying LPDDR4 memory where large capacity, elevated data rates, and a defined commercial operating temperature range are key selection criteria. Its combination of density, clocking, and package form factor supports scalable implementations in LPDDR4-based systems.
Request a quote or contact sales to inquire about availability, pricing, and lead times for the MT53D1024M32D4DT-053 WT:D.
