MT53D1024M32D4NQ-046 AAT:D TR

IC DRAM 32GBIT 2.133GHZ 200VFBGA
Part Description

IC DRAM 32GBIT 2.133GHZ 200VFBGA

Quantity 535 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package200-VFBGA (10x14.5)Memory FormatDRAMTechnologySDRAM - Mobile LPDDR4
Memory Size32 GbitAccess TimeN/AGradeAutomotive
Clock Frequency2.133 GHzVoltage1.1VMemory TypeVolatile
Operating Temperature-40°C ~ 105°C (TC)Write Cycle Time Word PageN/APackaging200-VFBGA
Mounting MethodVolatileMemory InterfaceN/AMemory Organization1G x 32
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unknown
QualificationAEC-Q100ECCNOBSOLETEHTS CodeN/A

Overview of MT53D1024M32D4NQ-046 AAT:D TR – IC DRAM 32GBIT 2.133GHZ 200VFBGA

The MT53D1024M32D4NQ-046 AAT:D TR is a 32 Gbit volatile DRAM device implemented as Mobile LPDDR4 SDRAM with a 1G × 32 memory organization. It delivers high-frequency operation at 2.133 GHz in a compact 200-VFBGA (10 × 14.5 mm) package.

Designed for applications that require high bandwidth and high density memory, this Micron Technology Inc. part combines 32 Gbit capacity, a 1.1 V supply, automotive-level qualification, and an extended operating temperature range to address demanding embedded and automotive use cases.

Key Features

  • Memory Core Mobile LPDDR4 SDRAM technology with a memory organization of 1G × 32, providing 32 Gbit total capacity.
  • Performance Supports a clock frequency of 2.133 GHz for high-bandwidth memory access.
  • Power Low-voltage operation at a 1.1 V supply to support power-sensitive system designs.
  • Package Supplied in a 200-VFBGA package (10 × 14.5 mm) for compact board-level integration.
  • Temperature Range Rated for operation from -40°C to 105°C (TC), enabling use across extended thermal environments.
  • Qualification AEC-Q100 qualification indicates conformance to automotive-grade qualification criteria.
  • Memory Format Volatile DRAM suitable for high-speed temporary data storage in system memory subsystems.

Typical Applications

  • Automotive systems — AEC-Q100 qualification and -40°C to 105°C operating range support integration into automotive electronics that require high-density volatile memory.
  • Mobile devices — Mobile LPDDR4 technology and 2.133 GHz clock frequency provide the bandwidth needed for high-performance mobile memory subsystems.
  • Embedded systems — Compact 200‑VFBGA packaging and 32 Gbit capacity suit embedded designs requiring dense, high-speed DRAM.

Unique Advantages

  • High-density memory: 32 Gbit capacity enables larger memory footprints in space-constrained designs.
  • High bandwidth: 2.133 GHz clock frequency supports demanding data-throughput requirements.
  • Low-voltage operation: 1.1 V supply helps reduce system power consumption compared with higher-voltage alternatives.
  • Automotive-qualified: AEC-Q100 qualification provides traceable qualification for automotive deployment.
  • Wide operating temperature: -40°C to 105°C rating supports use across harsh thermal environments.
  • Compact package: 200-VFBGA (10 × 14.5 mm) enables dense PCB layouts and efficient board real estate usage.

Why Choose IC DRAM 32GBIT 2.133GHZ 200VFBGA?

The MT53D1024M32D4NQ-046 AAT:D TR offers a combination of high capacity, high clock speed, and automotive-level qualification, making it well suited for designs that require both density and robustness. Its LPDDR4 architecture and 1.1 V operation address performance and power trade-offs in compact system designs.

Manufactured by Micron Technology Inc., this DRAM device is targeted at engineers and purchasers developing mobile, embedded, and automotive applications that need a verified, high-bandwidth memory element with extended temperature capability.

Request a quote or contact sales to discuss availability, pricing, and lead times for the MT53D1024M32D4NQ-046 AAT:D TR.

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