MT53D1024M32D4NQ-046 AIT:D TR
| Part Description |
IC DRAM 32GBIT 2.133GHZ 200VFBGA |
|---|---|
| Quantity | 379 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 200-VFBGA (10x14.5) | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Automotive | ||
| Clock Frequency | 2.133 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 95°C (TC) | Write Cycle Time Word Page | N/A | Packaging | 200-VFBGA | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 1G x 32 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | AEC-Q100 | ECCN | OBSOLETE | HTS Code | N/A |
Overview of MT53D1024M32D4NQ-046 AIT:D TR – IC DRAM 32GBIT 2.133GHZ 200VFBGA
The MT53D1024M32D4NQ-046 AIT:D TR is a 32 Gbit DRAM device implemented in the Mobile LPDDR4 SDRAM architecture. It delivers a 1G × 32 memory organization with a 2.133 GHz clock frequency and operates from a 1.1 V supply.
Targeted for systems requiring high-bandwidth memory in a compact package, this device provides automotive-grade qualification and an extended operating temperature range for use in demanding environments.
Key Features
- Technology (Core) SDRAM - Mobile LPDDR4 architecture delivering LPDDR4-compatible functionality as specified by the device data.
- Memory Organization & Capacity 1G × 32 organization for a total memory size of 32 Gbit (DRAM).
- Performance Clock frequency of 2.133 GHz to support high-rate memory transactions.
- Power Voltage supply: 1.1 V.
- Package 200-VFBGA package (10 × 14.5 mm) for compact board-level mounting.
- Reliability & Temperature AEC-Q100 qualification with an operating temperature range of −40°C to 95°C (TC), suitable for temperature-extreme applications.
Typical Applications
- Automotive systems Automotive-qualified memory for in-vehicle systems requiring high-bandwidth DRAM and extended temperature operation.
- Mobile-class devices Mobile LPDDR4 architecture suited to compact, performance-focused consumer or embedded devices.
- Embedded high-bandwidth memory Use as a high-density DRAM component in embedded platforms that require 2.133 GHz clocking and a 1.1 V supply.
Unique Advantages
- High bandwidth: 2.133 GHz clock frequency supports demanding memory throughput requirements.
- High density: 32 Gbit memory capacity provides substantial on-board DRAM in a single device.
- Automotive qualification: AEC-Q100 qualification indicates suitability for automotive-grade designs.
- Wide temperature range: Rated from −40°C to 95°C (TC) for operation in temperature-challenging environments.
- Compact package: 200-VFBGA (10 × 14.5 mm) package supports space-constrained board designs.
- Standard supply voltage: Operates from a 1.1 V supply consistent with LPDDR4 system designs.
Why Choose IC DRAM 32GBIT 2.133GHZ 200VFBGA?
This MT53D1024M32D4NQ-046 AIT:D TR device positions itself as a high-density, high-frequency LPDDR4 DRAM option for designs that require substantial memory bandwidth and automotive-grade qualification. Its combination of 32 Gbit capacity, 2.133 GHz operation, and AEC-Q100 qualification addresses both performance and environmental robustness needs.
It is well suited for engineers and procurement teams designing compact, performance-oriented systems where standardized LPDDR4 architecture, a 1.1 V supply, and a 200-VFBGA package contribute to scalable and reliable memory subsystems.
Request a quote or submit an inquiry to discuss pricing, availability, and lead times for the MT53D1024M32D4NQ-046 AIT:D TR.
