MT53D1024M32D4NQ-046 WT ES:D
| Part Description |
IC DRAM 32GBIT 2.133GHZ 200VFBGA |
|---|---|
| Quantity | 856 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 200-VFBGA (10x14.5) | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 2.133 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | 200-VFBGA | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 1G x 32 | ||
| Moisture Sensitivity Level | 1 (Unlimited) | RoHS Compliance | Unknown | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | OBSOLETE | HTS Code | N/A |
Overview of MT53D1024M32D4NQ-046 WT ES:D – IC DRAM 32GBIT 2.133GHZ 200VFBGA
The MT53D1024M32D4NQ-046 WT ES:D is a 32 Gbit volatile DRAM device based on Mobile LPDDR4 SDRAM architecture. It is organized as 1G × 32 and is specified for a 2.133 GHz clock frequency, targeting designs that require high-speed, high-density dynamic memory.
Designed for compact system integration, the device operates at a 1.1 V supply and is offered in a 200‑VFBGA (10 × 14.5) package. It supports an operating temperature range of -30°C to 85°C (TC).
Key Features
- Memory Core: 32 Gbit DRAM organized as 1G × 32, providing high-density volatile storage in a single device.
- Technology: SDRAM – Mobile LPDDR4 architecture for mobile-oriented memory operation.
- Performance: Clock frequency specified at 2.133 GHz for high-speed data transfer.
- Power: 1.1 V supply voltage to support low-voltage operation consistent with mobile LPDDR4 designs.
- Package: 200‑VFBGA (10 × 14.5) supplier device package for compact board-level footprint.
- Thermal Range: Operating temperature from -30°C to 85°C (TC) for a range of environmental conditions.
- Memory Format & Mounting: DRAM, volatile mounting type suitable for system memory applications.
Typical Applications
- Mobile Devices — High-density LPDDR4 memory suitable for mobile device memory subsystems requiring compact packaging and high clock rates.
- Embedded Systems — Use in embedded platforms that need high-speed volatile memory with a small board footprint.
- Consumer Electronics — Integration into compact consumer products where 32 Gbit memory density and low operating voltage are required.
Unique Advantages
- High-density 32 Gbit capacity: Enables significant memory capacity within a single device footprint, reducing component count on system memory boards.
- 2.133 GHz operation: Provides a high clock frequency for designs that require elevated data-rate capability.
- Low-voltage operation: 1.1 V supply supports lower power consumption relative to higher-voltage memories.
- Compact VFBGA package: 200‑VFBGA (10 × 14.5) package allows dense PCB integration and space savings.
- Broad operating temperature: Specified -30°C to 85°C (TC) for deployment across a variety of thermal environments.
Why Choose IC DRAM 32GBIT 2.133GHZ 200VFBGA?
This MT53D1024M32D4NQ-046 WT ES:D device combines high density, high clock-speed LPDDR4 SDRAM technology with a compact 200‑VFBGA package and low-voltage operation. It is positioned for designs that require a balance of capacity, speed, and board-level integration.
The device is suited to engineers and procurement teams specifying mobile LPDDR4 memory for compact, high-performance applications where operating temperature range and supply voltage are important selection criteria.
Request a quote or submit an inquiry to receive pricing and availability information for the MT53D1024M32D4NQ-046 WT ES:D.
