MT53D1024M32D4NQ-053 WT ES:D

The MT53D1024M32D4NQ-053 WT ES:D is a 32 Gbit volatile DRAM device implemented as Mobile LPDDR4 SDRAM. It features a 1G × 32 memory organization and supports operation at a clock frequency of 1.866 GHz while operating from a 1.1 V supply.

Packaged in a 200‑VFBGA (10 × 14.5 mm) and specified for an operating temperature range of −30 °C to 85 °C, this component is targeted at designs requiring high-speed, low-voltage mobile LPDDR4 memory density.

Key Features

• Core / Technology SD-RAM, Mobile LPDDR4 architecture delivering high-speed volatile memory functionality.
• Memory Capacity & Organization 32 Gbit density organized as 1G × 32 to support large memory footprints in a single device.
• Performance Supports a clock frequency of 1.866 GHz for high data-rate operation.
• Power Operates from a 1.1 V supply to support low-voltage system designs.
• Package Supplied in a 200‑VFBGA package (10 × 14.5 mm), enabling compact board-level integration.
• Temperature Range Rated for operation from −30 °C to 85 °C (TC) for extended environmental tolerance.

Typical Applications

• Mobile devices Mobile LPDDR4 technology and 1.1 V operation make this device suitable for handheld and battery-powered systems that require high-speed memory.
• Consumer electronics High density and 1.866 GHz operation support multimedia and responsive user experiences in compact consumer products.
• Embedded systems The 32 Gbit density and VFBGA packaging enable integration into space-constrained embedded designs that need significant volatile memory.

Unique Advantages

• High data throughput: 1.866 GHz clock frequency enables elevated memory bandwidth for data‑intensive tasks.
• Large single‑device capacity: 32 Gbit density reduces the need for multiple memory devices to achieve required system memory size.
• Low-voltage operation: 1.1 V supply supports lower power consumption compared with higher-voltage memory options.
• Compact package: 200‑VFBGA (10 × 14.5 mm) package supports compact board layouts and tight system integration.
• Extended operating temperature: Rated −30 °C to 85 °C for operation across a broad environmental range.

Why Choose MT53D1024M32D4NQ-053 WT ES:D?

The MT53D1024M32D4NQ-053 WT ES:D balances high-speed LPDDR4 performance with low-voltage operation and substantial 32 Gbit capacity, packaged in a compact 200‑VFBGA footprint. These characteristics make it well suited for designs that demand dense, fast volatile memory while maintaining power efficiency and space-constrained integration.

Manufactured by Micron Technology Inc., the device is appropriate for engineers specifying mobile LPDDR4 memory where specified clock frequency, voltage, capacity, package, and operating temperature are primary selection criteria.

Request a quote or submit an inquiry for pricing and availability of the MT53D1024M32D4NQ-053 WT ES:D to evaluate integration into your design.