MT53D1024M32D4NQ-053 WT:D

The MT53D1024M32D4NQ-053 WT:D is a volatile SDRAM device implemented in Mobile LPDDR4 technology, providing 32 Gbit of memory capacity in a 1G x 32 organization. It delivers high-speed operation at a clock frequency of 1.866 GHz in a compact 200‑VFBGA (10 × 14.5 mm) package.

This device is intended for applications that require high-density, high-frequency volatile memory with low-voltage operation and a wide operating temperature range, while minimizing board area through a small BGA footprint.

Key Features

• Memory Technology SDRAM implemented as Mobile LPDDR4; volatile DRAM memory format suited for high-density transient storage.
• Density & Organization 32 Gbit capacity arranged as 1G × 32, enabling large accessible memory in a single device.
• High-Speed Operation Clock frequency of 1.866 GHz to support high-throughput memory access patterns.
• Low-Voltage Supply 1.1 V supply voltage for reduced power consumption relative to higher-voltage memory options.
• Compact Package 200‑VFBGA package (10 × 14.5 mm) for space-efficient integration on system PCBs.
• Wide Operating Temperature Specified operating temperature range of −30 °C to 85 °C (TC) for deployment across varied thermal environments.

Typical Applications

• Mobile devices — Mobile LPDDR4 technology and the high-density 32 Gbit capacity make this device suitable for memory subsystems in handheld and portable electronics.
• Compact memory modules — Small 200‑VFBGA package supports designs where board area and component count are constrained.
• High-performance volatile storage — High clock frequency and 1G × 32 organization serve systems requiring fast transient data buffering.

Unique Advantages

• High-density 32 Gbit capacity: Provides substantial volatile storage in a single device, reducing the number of components needed for large memory footprints.
• 1.866 GHz clock performance: Enables high-throughput memory access for bandwidth-sensitive applications.
• Low-voltage 1.1 V operation: Offers lower power draw compared with higher-voltage memories, aiding energy-sensitive designs.
• Compact 200‑VFBGA package: Minimizes PCB area while maintaining a robust BGA mounting form factor (10 × 14.5 mm).
• Broad operating temperature range: −30 °C to 85 °C (TC) supports deployment in a range of thermal conditions.
• Clear memory organization: 1G × 32 arrangement simplifies capacity planning and system memory mapping.

Why Choose IC DRAM 32GBIT 1.866GHZ 200VFBGA?

The MT53D1024M32D4NQ-053 WT:D from Micron Technology Inc. combines high density, high clock speed, and low-voltage operation in a compact 200‑VFBGA package. It is positioned for designs that require substantial volatile memory capacity with fast access times while conserving board area and supply voltage.

This device is well suited to engineers and procurement teams specifying memory for mobile-focused and space-constrained systems that must operate across a wide temperature range. Its clear organization and defined electrical and thermal characteristics support straightforward integration into high-density memory subsystems.

Request a quote or contact sales to discuss pricing, availability, and how the MT53D1024M32D4NQ-053 WT:D can meet your project requirements.