MT53D1024M32D4NQ-062 WT:D
| Part Description |
IC DRAM 32GBIT 1.6GHZ 200VFBGA |
|---|---|
| Quantity | 30 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 200-VFBGA (10x14.5) | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 1.6 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | 200-VFBGA | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 1G x 32 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | OBSOLETE | HTS Code | N/A |
Overview of MT53D1024M32D4NQ-062 WT:D – 32 Gbit Mobile LPDDR4 DRAM, 1.6 GHz, 200-VFBGA
The MT53D1024M32D4NQ-062 WT:D is a 32 Gbit volatile memory device implemented as Mobile LPDDR4 SDRAM. It delivers high-density DRAM in a compact 200-VFBGA package suited to space-constrained system designs.
With a memory organization of 1G × 32, a clock frequency of 1.6 GHz and a 1.1 V supply, this device targets applications that require high-capacity, low-voltage memory in a small form factor while operating across a -30°C to 85°C temperature range.
Key Features
- Core / Memory 32 Gbit capacity organized as 1G × 32, implemented as Mobile LPDDR4 SDRAM for volatile data storage.
- Performance 1.6 GHz clock frequency providing high-speed DRAM operation as specified.
- Power 1.1 V nominal supply voltage to support low-voltage operation.
- Package 200-VFBGA (10 × 14.5 mm) compact package for high-density board integration.
- Operating Temperature Rated for -30°C to 85°C (TC), enabling use across a range of thermal environments.
Typical Applications
- Mobile devices — High-density LPDDR4 memory for compact handheld systems requiring low-voltage operation and small package size.
- Portable electronics — Provides large volatile storage capacity in space-constrained consumer or industrial handheld products.
- Embedded systems — Suited for embedded designs that need 32 Gbit DRAM in a 200-VFBGA footprint and operation across -30°C to 85°C.
Unique Advantages
- High memory density: 32 Gbit capacity reduces the need for multiple DRAM components and simplifies bill-of-materials for high-capacity designs.
- High-speed operation: 1.6 GHz clock frequency supports fast memory access patterns where speed is required.
- Low-voltage operation: 1.1 V supply lowers power consumption relative to higher-voltage alternatives, helping system-level power management.
- Compact package: 200-VFBGA (10 × 14.5 mm) enables integration into compact PCBs and modules where board space is limited.
- Extended temperature range: Rated from -30°C to 85°C (TC), allowing deployment in applications with broader thermal requirements.
- Recognized manufacturer: Produced by Micron Technology Inc., offering a known supplier source for high-density LPDDR4 DRAM.
Why Choose IC DRAM 32GBIT 1.6GHZ 200VFBGA?
The MT53D1024M32D4NQ-062 WT:D positions itself as a high-density, low-voltage Mobile LPDDR4 DRAM option for designs that require 32 Gbit of volatile memory in a small 200-VFBGA footprint. Its combination of 1.6 GHz clocking, 1.1 V operation and an extended -30°C to 85°C operating range makes it suitable for compact and thermally varied applications.
This device is appropriate for engineers and procurement teams designing mobile, portable or embedded systems that need large-capacity DRAM with a minimized board footprint and low-voltage characteristics, backed by a recognized memory manufacturer.
Request a quote or contact sales to discuss availability, pricing and lead times for the MT53D1024M32D4NQ-062 WT:D.
