MT53D1024M64D8NW-053 WT ES:D
| Part Description |
IC DRAM 64GBIT 1.866GHZ 432VFBGA |
|---|---|
| Quantity | 404 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 432-VFBGA (15x15) | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 1.866 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | 432-VFBGA | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 1G x 64 | ||
| Moisture Sensitivity Level | 1 (Unlimited) | RoHS Compliance | Unknown | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0036 |
Overview of MT53D1024M64D8NW-053 WT ES:D – IC DRAM 64GBIT 1.866GHZ 432VFBGA
The MT53D1024M64D8NW-053 WT ES:D is a volatile SDRAM device implemented in Mobile LPDDR4 technology, organized as 1G × 64 for a total density of 64 Gbit. It provides high-speed mobile DRAM operation with a specified clock frequency of 1.866 GHz and a nominal supply voltage of 1.1 V.
Packaged in a compact 432-VFBGA (15×15) and rated for operation from −30°C to 85°C (TC), this DRAM device targets mobile and embedded memory subsystems that require high data rate, high-density LPDDR4 memory integration.
Key Features
- Memory Core Mobile LPDDR4 SDRAM architecture, organized as 1G × 64 for a total of 64 Gbit density.
- Performance Rated clock frequency of 1.866 GHz to support high-speed memory transfers in LPDDR4 designs.
- Power Nominal supply voltage of 1.1 V consistent with LPDDR4 low-voltage operation.
- Package 432-VFBGA package in a 15×15 mm footprint for compact, board-level integration.
- Environmental Range Operating temperature range from −30°C to 85°C (TC) for a variety of thermal environments.
- Memory Format Volatile DRAM suitable for high-speed working memory applications in LPDDR4 systems.
Typical Applications
- Mobile devices — High-density LPDDR4 memory for handheld devices and mobile platforms requiring 64 Gbit DRAM capacity.
- Embedded systems — On-board working memory for embedded designs that need low-voltage, high-bandwidth DRAM.
- Compact module designs — Integration into space-constrained printed circuit boards using the 432-VFBGA (15×15) package.
Unique Advantages
- High-density memory: 64 Gbit capacity (1G × 64) provides significant DRAM capacity in a single device.
- High-speed operation: 1.866 GHz clock frequency supports fast data throughput for LPDDR4 memory channels.
- Low-voltage operation: 1.1 V supply reduces power draw compared with higher-voltage memories where applicable.
- Compact packaging: 432-VFBGA (15×15) package enables dense board integration and space savings.
- Extended temperature range: Rated −30°C to 85°C (TC) to accommodate a range of thermal operating conditions.
Why Choose MT53D1024M64D8NW-053 WT ES:D?
This Micron Technology Inc. Mobile LPDDR4 DRAM device combines 64 Gbit density, 1.866 GHz clocking, and 1.1 V operation in a compact 432-VFBGA (15×15) package, offering a clear option for designs that require high-speed, low-voltage DRAM integration. The device's specified operating temperature range supports deployment across a variety of thermal environments.
The MT53D1024M64D8NW-053 WT ES:D is suited to designers and procurement teams building mobile and embedded platforms that need verified LPDDR4 density and performance from a known memory supplier.
Request a quote or submit an inquiry to receive pricing and availability information for the MT53D1024M64D8NW-053 WT ES:D.
