MT53D1024M64D8NW-062 WT:D

IC DRAM 64GBIT 1.6GHZ 432VFBGA
Part Description

IC DRAM 64GBIT 1.6GHZ 432VFBGA

Quantity 68 Available (as of May 6, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package432-VFBGA (15x15)Memory FormatDRAMTechnologySDRAM - Mobile LPDDR4
Memory Size64 GbitAccess TimeN/AGradeIndustrial
Clock Frequency1.6 GHzVoltage1.1VMemory TypeVolatile
Operating Temperature-30°C ~ 85°C (TC)Write Cycle Time Word PageN/APackaging432-VFBGA
Mounting MethodVolatileMemory InterfaceN/AMemory Organization1G x 64
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNOBSOLETEHTS CodeN/A

Overview of MT53D1024M64D8NW-062 WT:D – IC DRAM 64GBIT 1.6GHZ 432VFBGA

The MT53D1024M64D8NW-062 WT:D is a 64 Gbit volatile DRAM device based on Mobile LPDDR4 SDRAM architecture. It provides a 1G × 64 memory organization operating at a 1.6 GHz clock frequency with a 1.1 V supply.

Packaged in a 432-VFBGA (15 × 15) footprint and specified for an operating temperature range of -30°C to 85°C (TC), this device targets system designs that require compact, high-density LPDDR4 memory elements.

Key Features

  • Memory Architecture  Mobile LPDDR4 SDRAM with a 1G × 64 organization, providing a total memory size of 64 Gbit.
  • Clock Frequency  1.6 GHz rated clock frequency for its LPDDR4 operation.
  • Power  1.1 V supply voltage for low-voltage system designs.
  • Package  432-VFBGA (15 × 15) supplier device package for compact board integration.
  • Memory Type  Volatile DRAM memory format suitable for LPDDR4 system implementations.
  • Temperature Range  Specified operating temperature: -30°C to 85°C (TC).

Typical Applications

  • Mobile devices  LPDDR4 memory complement for mobile platforms requiring 64 Gbit density and 1.6 GHz operation.
  • Handheld and portable electronics  Compact 432-VFBGA package and 1.1 V operation support space- and power-constrained designs.
  • Compact compute modules  1G × 64 organization and high-density memory make it suitable for small-form-factor modules needing LPDDR4 memory.

Unique Advantages

  • High-density capacity: 64 Gbit memory size supports larger memory footprints within a single device.
  • High-frequency operation: 1.6 GHz clocking supports LPDDR4 timing requirements for demanding memory bandwidth.
  • Low-voltage design: 1.1 V supply enables lower-power implementations consistent with mobile LPDDR4 systems.
  • Compact package: 432-VFBGA (15 × 15) package reduces PCB area for dense board layouts.
  • Defined temperature range: Rated for -30°C to 85°C (TC) to support designs operating across varied thermal conditions.

Why Choose IC DRAM 64GBIT 1.6GHZ 432VFBGA?

The MT53D1024M64D8NW-062 WT:D from Micron Technology Inc. combines LPDDR4 architecture, 64 Gbit density, and 1.6 GHz operation in a compact 432-VFBGA package. Its 1.1 V supply and specified temperature range align with mobile and compact-system requirements where board space and power are constrained.

This part is suited for designers building mobile-platform memory subsystems and compact compute modules that require a verified LPDDR4 memory device with defined electrical and thermal characteristics.

Request a quote or contact sales to obtain pricing, availability, and lead-time information for MT53D1024M64D8NW-062 WT:D.

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