MT53D1024M64D8NW-053 WT:D
| Part Description |
IC DRAM 64GBIT 1.866GHZ 432VFBGA |
|---|---|
| Quantity | 1,329 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 432-VFBGA (15x15) | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 1.866 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | 432-VFBGA | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 1G x 64 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | OBSOLETE | HTS Code | N/A |
Overview of MT53D1024M64D8NW-053 WT:D – 64Gbit Mobile LPDDR4 DRAM, 1.866 GHz, 432‑VFBGA
The MT53D1024M64D8NW-053 WT:D is a volatile DRAM device built on Mobile LPDDR4 SDRAM technology. It provides 64 Gbit of memory organized as 1G × 64 and operates at a clock frequency of 1.866 GHz.
Designed for implementations that require a 1.1 V supply and a compact BGA footprint, this device is supplied in a 432‑VFBGA (15×15) package and supports an operating temperature range of −30 °C to 85 °C (TC).
Key Features
- Memory Core / Architecture Mobile LPDDR4 SDRAM technology; volatile DRAM organized as 1G × 64 delivering a total capacity of 64 Gbit.
- Performance Clock frequency of 1.866 GHz for timing and throughput characteristics defined by the device.
- Power Nominal supply voltage of 1.1 V, consistent with mobile LPDDR4 voltage requirements.
- Package 432‑VFBGA package case with a 15 × 15 mm footprint (432‑VFBGA), suitable for compact board layouts.
- Operating Temperature Specified operating temperature range: −30 °C to 85 °C (TC).
- Memory Format DRAM memory format with supplier device package specified as 432‑VFBGA.
Unique Advantages
- High aggregate capacity: 64 Gbit density supports applications requiring substantial DRAM resources within a single device.
- Defined high-frequency operation: 1.866 GHz clocking provides the device timing characteristics required by systems targeting this frequency.
- Low-voltage operation: 1.1 V nominal supply reduces system power domain complexity where LPDDR4 supply rails are used.
- Compact BGA footprint: 432‑VFBGA (15×15) package enables dense PCB integration while maintaining the specified device pinout.
- Wide temperature range: −30 °C to 85 °C (TC) operating window for deployments within this thermal envelope.
Why Choose IC DRAM 64GBIT 1.866GHZ 432VFBGA?
The MT53D1024M64D8NW-053 WT:D is positioned to deliver a defined combination of capacity, timing, and package density: 64 Gbit of Mobile LPDDR4 DRAM operating at 1.866 GHz with a 1.1 V supply in a 432‑VFBGA (15×15) package. This makes it appropriate for designs that require a specific LPDDR4 memory configuration and footprint.
Its specified operating temperature range and clear electrical parameters simplify component selection for engineers and procurement teams seeking a deterministic memory part with the documented characteristics provided here.
Request a quote or submit a pricing and availability inquiry for MT53D1024M64D8NW-053 WT:D to receive detailed commercial information and lead-time options.
