MT53D1024M64D8NW-053 WT ES:D TR

The MT53D1024M64D8NW-053 WT ES:D TR is a volatile DRAM device implemented in Mobile LPDDR4 SDRAM technology. It provides a 64 Gbit density organized as 1G × 64 with a rated clock frequency of 1.866 GHz and a 1.1 V supply.

Designed for compact memory implementations, this device combines high clock frequency and low-voltage operation in a 432‑VFBGA (15×15) package, and is suited to mobile memory applications requiring defined thermal and electrical characteristics.

Key Features

• Memory Type & Technology  Volatile DRAM based on Mobile LPDDR4 SDRAM technology for mobile-class memory subsystems.
• Density & Organization  64 Gbit capacity arranged as 1G × 64 to provide a wide data path and high memory density in a single device.
• Clock Frequency  Rated 1.866 GHz clock frequency to support high-speed memory operation where specified timing is required.
• Supply Voltage  Operates from a 1.1 V supply, enabling lower-voltage memory designs consistent with mobile power constraints.
• Package  432‑VFBGA package (15×15) for compact, board-level integration in space-constrained designs.
• Operating Temperature  Specified operating temperature range of −30°C to 85°C (TC), supporting deployment in environments within this thermal window.

Typical Applications

• Mobile devices  High-density LPDDR4 memory for mobile-class platforms where 1.866 GHz operation and 1.1 V supply are required.
• Portable consumer electronics  Compact 432‑VFBGA package and 64 Gbit capacity enable integration into space-constrained portable systems.
• Memory subsystems  Use as a high-density DRAM component in memory module designs or embedded memory arrays that specify 1G × 64 organization.

Unique Advantages

• High-density single-device solution: 64 Gbit capacity reduces the number of components required to reach target memory sizes.
• Wide data organization: 1G × 64 organization provides a 64-bit data path for simplified memory bus design in supported architectures.
• High-clock capability: 1.866 GHz clock frequency supports high-speed memory operation where specified timing is needed.
• Low-voltage operation: 1.1 V supply supports power-conscious designs and helps reduce overall system power draw.
• Compact package footprint: 432‑VFBGA (15×15) package enables integration into tight PCB layouts and space-limited modules.
• Defined thermal range: Specified −30°C to 85°C operating range aids thermal planning and reliability assessments for qualifying designs.

Why Choose IC DRAM 64GBIT 1.866GHZ 432VFBGA?

Manufactured by Micron Technology Inc., this MT53D1024M64D8NW-053 WT ES:D TR device pairs the capacity of a 64 Gbit DRAM with mobile LPDDR4 technology characteristics such as 1.866 GHz clocking and 1.1 V operation. Its 1G × 64 organization and compact 432‑VFBGA (15×15) package make it appropriate for designs that require high density in a small footprint.

Choose this device for designs that need clearly specified electrical and thermal parameters—such as clock frequency, supply voltage, and operating temperature—to simplify system integration and long-term design planning.

For pricing, availability, or to request a quote for MT53D1024M64D8NW-053 WT ES:D TR, please submit a request or inquiry to our sales team.