MT53D1024M64D8NW-046 WT ES:D
| Part Description |
IC DRAM 64GBIT 2.133GHZ 432VFBGA |
|---|---|
| Quantity | 125 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 432-VFBGA (15x15) | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 2.133 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | 432-VFBGA | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 1G x 64 | ||
| Moisture Sensitivity Level | 1 (Unlimited) | RoHS Compliance | Unknown | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | OBSOLETE | HTS Code | N/A |
Overview of MT53D1024M64D8NW-046 WT ES:D – IC DRAM 64GBIT 2.133GHZ 432VFBGA
The MT53D1024M64D8NW-046 WT ES:D is a 64 Gbit volatile DRAM device implemented in Mobile LPDDR4 SDRAM architecture. It provides a 1G x 64 memory organization operating at a 2.133 GHz clock frequency and is supplied at 1.1 V.
This device is targeted for designs requiring high-density mobile LPDDR4 memory in a compact 432-VFBGA package. Key value propositions include high data-rate operation, a 64 Gbit density in a 432-VFBGA (15x15) footprint, and an extended operating temperature range.
Key Features
- Core / Memory Mobile LPDDR4 SDRAM technology providing a 64 Gbit memory capacity organized as 1G × 64.
- Performance 2.133 GHz clock frequency for high-rate DRAM operation.
- Power 1.1 V supply voltage specified for device operation.
- Package 432-VFBGA package format (15x15), suitable for compact board-level integration.
- Operating Range Specified operating temperature range of −30°C to 85°C (TC).
- Memory Type / Mounting Volatile DRAM intended for surface-mounted integration.
- Manufacturer Produced by Micron Technology Inc.
Typical Applications
- Mobile devices — Use as high-density LPDDR4 system memory where Mobile LPDDR4 architecture and 64 Gbit capacity are required.
- Embedded systems — Provides large-capacity volatile working memory in space-constrained designs thanks to the 432-VFBGA (15x15) package.
- High-bandwidth memory subsystems — Suited for applications that need 2.133 GHz DRAM clock operation and a 1G × 64 organization.
Unique Advantages
- High-density memory: 64 Gbit capacity addresses designs needing substantial volatile storage in a single device.
- High-speed operation: 2.133 GHz clock frequency enables high-rate data transfer consistent with LPDDR4 performance requirements.
- Low-voltage operation: 1.1 V supply reduces operating voltage requirement, matching Mobile LPDDR4 system power rails.
- Compact package: 432-VFBGA (15x15) package minimizes board footprint for space-constrained implementations.
- Extended temperature range: −30°C to 85°C (TC) supports deployment across a broad set of operating environments.
- Clear memory organization: 1G × 64 arrangement simplifies capacity and bus-width planning during system design.
Why Choose MT53D1024M64D8NW-046 WT ES:D?
This Micron-manufactured LPDDR4 DRAM device combines 64 Gbit density, a 1G × 64 organization, and a 2.133 GHz clock frequency in a compact 432-VFBGA (15x15) package. It is well suited to designers and engineers developing mobile and embedded systems that require high-density, high-rate volatile memory with a 1.1 V supply and an operating temperature window of −30°C to 85°C.
The MT53D1024M64D8NW-046 WT ES:D provides a clear specification set for integration into memory subsystems where Mobile LPDDR4 architecture and package density are primary design considerations, and it is backed by Micron Technology Inc.
Request a quote or contact sales to discuss pricing, availability, and integration details for MT53D1024M64D8NW-046 WT ES:D.
