MT53D1024M32D4NQ-053 WT:D TR
| Part Description |
IC DRAM 32GBIT 1.866GHZ 200VFBGA |
|---|---|
| Quantity | 783 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 200-VFBGA (10x14.5) | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 1.866 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | 200-VFBGA | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 1G x 32 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0036 |
Overview of MT53D1024M32D4NQ-053 WT:D TR – IC DRAM 32Gbit 1.866GHz 200-VFBGA
The MT53D1024M32D4NQ-053 WT:D TR is a 32 Gbit volatile DRAM device implemented in Mobile LPDDR4 SDRAM architecture. It is organized as 1G x 32 with a maximum clock frequency of 1.866 GHz and a 1.1 V supply voltage.
This device targets designs that require high-density LPDDR4 memory in a compact 200‑VFBGA (10 × 14.5 mm) package and supports operation across a specified temperature range of −30°C to 85°C.
Key Features
- Memory Core Mobile LPDDR4 SDRAM architecture, organized as 1G × 32 for a total density of 32 Gbit.
- Clock Performance Rated for operation at up to 1.866 GHz clock frequency to support high-bandwidth memory access patterns.
- Power Single 1.1 V supply voltage as specified for the device.
- Package 200‑VFBGA package (10 × 14.5 mm) providing a compact footprint for board-level integration.
- Operating Temperature Specified operating temperature range of −30°C to 85°C.
- Memory Type Volatile DRAM format intended for standard volatile memory applications.
Typical Applications
- Mobile and handheld devices — High-density Mobile LPDDR4 memory suitable for compact systems requiring 32 Gbit of DRAM in a small package.
- Embedded systems — Use where a 1G × 32 organization and 1.1 V supply align with system memory architecture and power budgets.
- High-bandwidth memory subsystems — Applications needing operation at up to 1.866 GHz clock frequency for sustained data throughput.
Unique Advantages
- High memory density: 32 Gbit capacity in a single device reduces the number of components required for high-capacity memory designs.
- Compact package: 200‑VFBGA (10 × 14.5 mm) enables integration into space-constrained PCBs.
- Low-voltage operation: 1.1 V supply supports lower power operation compared with higher-voltage DRAM alternatives.
- Specified temperature range: −30°C to 85°C rating provides clarity on environmental operating limits for system qualification.
- LPDDR4 architecture: Mobile LPDDR4 SDRAM organization (1G × 32) aligns with contemporary mobile memory design approaches.
Why Choose IC DRAM 32GBIT 1.866GHZ 200VFBGA?
The MT53D1024M32D4NQ-053 WT:D TR combines a 32 Gbit LPDDR4 memory core, 1.866 GHz clock capability, and a compact 200‑VFBGA package to deliver a high-density, low-voltage DRAM option for designs that require significant on-board memory within a constrained footprint. Its specified operating temperature range and 1.1 V supply provide clear, verifiable parameters for integration into system-level designs.
This device is suitable for engineers and procurement teams specifying high-density mobile LPDDR4 memory where density, package size, clock rate, and supply voltage are primary selection criteria.
Request a quote or submit a sales inquiry to receive pricing, availability, and additional integration support for the MT53D1024M32D4NQ-053 WT:D TR.
