MT53D1024M32D4NQ-053 WT ES:D TR
| Part Description |
IC DRAM 32GBIT 1.866GHZ 200VFBGA |
|---|---|
| Quantity | 1,934 Available (as of May 6, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 200-VFBGA (10x14.5) | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 1.866 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | 200-VFBGA | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 1G x 32 | ||
| Moisture Sensitivity Level | 1 (Unlimited) | RoHS Compliance | Unknown | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0036 |
Overview of MT53D1024M32D4NQ-053 WT ES:D TR – IC DRAM 32GBIT 1.866GHZ 200VFBGA
The MT53D1024M32D4NQ-053 WT ES:D TR is a volatile DRAM device based on Mobile LPDDR4 SDRAM technology. It provides a 32 Gbit high-density memory organized as 1G × 32 and operates at a clock frequency of 1.866 GHz.
Packaged in a 200-VFBGA (10 × 14.5) and specified for operation from −30°C to 85°C, this device is intended for systems requiring LPDDR4 memory density and performance with a 1.1 V supply.
Key Features
- Core / Memory: Mobile LPDDR4 SDRAM architecture; volatile DRAM memory format providing 32 Gbit capacity organized as 1G × 32.
- Performance: Rated clock frequency of 1.866 GHz for high-speed memory operations.
- Power: Low-voltage operation at a 1.1 V supply.
- Package: 200-VFBGA (10 × 14.5) supplier device package for compact board-level integration.
- Temperature Range: Specified operating temperature from −30°C to 85°C (TC).
- Mounting / Form Factor: Surface-mount VFBGA package suitable for compact system layouts.
Typical Applications
- Mobile devices: Use as LPDDR4 main memory where Mobile LPDDR4 SDRAM is required.
- Compact embedded systems: High-density 32 Gbit memory for space-constrained designs using a 200-VFBGA package.
- High-speed memory subsystems: Systems that require 1.866 GHz clock-rate DRAM performance at 1.1 V operation.
Unique Advantages
- High memory density: 32 Gbit capacity supports large memory requirements within a single device.
- High-speed operation: 1.866 GHz clock frequency enables faster memory transactions compared to lower-frequency devices.
- Low-voltage design: 1.1 V supply reduces power draw relative to higher-voltage memory options.
- Compact package: 200-VFBGA (10 × 14.5) minimizes PCB footprint for space-limited applications.
- Extended operating range: Specified −30°C to 85°C operating temperature suits a wide range of thermal environments.
- Standard memory organization: 1G × 32 configuration simplifies integration into LPDDR4 memory subsystems.
Why Choose IC DRAM 32GBIT 1.866GHZ 200VFBGA?
This MT53D1024M32D4NQ-053 WT ES:D TR device combines Mobile LPDDR4 architecture with high density and high clock-rate operation, delivering a practical balance of capacity, speed, and low-voltage operation. Its 200-VFBGA package and specified temperature range make it suitable for designs that require compact, high-capacity LPDDR4 memory.
Choose this device for designs that need verified LPDDR4 technology at 32 Gbit capacity, 1.866 GHz operation, and 1.1 V supply characteristics to support system-level memory requirements with compact package constraints.
If you would like pricing, availability, or to request a quote for MT53D1024M32D4NQ-053 WT ES:D TR, please submit a quote request or contact sales for further assistance.
