MT53D1024M32D4NQ-062 WT ES:D

The MT53D1024M32D4NQ-062 WT ES:D is a 32 Gbit volatile DRAM device implemented as mobile LPDDR4 SDRAM. It is organized as 1G × 32 and operates at a clock frequency of 1.6 GHz with a 1.1 V supply.

Targeted for space-constrained, high-density memory implementations, this device combines high clock speed, low operating voltage and a compact 200‑VFBGA (10×14.5) package for integration into mobile and portable designs requiring LPDDR4 memory.

Key Features

• Memory Type Volatile DRAM implemented as SDRAM – Mobile LPDDR4, provided in a 32 Gbit density.
• Organization & Capacity Arranged as 1G × 32 to deliver a total memory size of 32 Gbit for high-capacity footprints.
• Clock Performance Rated for operation at 1.6 GHz to meet timing requirements for LPDDR4 applications.
• Power Low-voltage operation at 1.1 V to support power-sensitive system designs.
• Package Supplied in a 200‑VFBGA package (10×14.5 mm) for compact board-level integration.
• Temperature Range Operating temperature: −30 °C to 85 °C (TC), suitable for a range of commercial and industrial thermal environments.

Typical Applications

• Mobile devices and handhelds — Provides LPDDR4 memory capacity and frequency suitable for compact mobile platforms that require low-voltage operation.
• Embedded processing platforms — Serves as main or auxiliary DRAM for embedded systems that need 32 Gbit density in a small package.
• Portable multimedia equipment — Supports memory-intensive tasks at 1.6 GHz clocking while maintaining a 1.1 V supply to conserve power.

Unique Advantages

• High-density memory — 32 Gbit capacity enables higher memory integration without increasing board count.
• LPDDR4 technology — Mobile LPDDR4 SDRAM architecture aligns with designs targeting low-power, high-performance memory needs.
• Compact VFBGA package — 200‑VFBGA (10×14.5) footprint simplifies placement in space-constrained assemblies.
• Low operating voltage — 1.1 V supply reduces system power consumption compared to higher-voltage alternatives.
• Wide operating temperature — −30 °C to 85 °C operation supports deployment across varied thermal conditions.
• Measured clock rate — 1.6 GHz operation provides a defined performance envelope for time-sensitive memory tasks.

Why Choose MT53D1024M32D4NQ-062 WT ES:D?

The MT53D1024M32D4NQ-062 WT ES:D positions itself as a high-density LPDDR4 DRAM option that balances capacity, clock rate and low-voltage operation in a compact 200‑VFBGA package. Its specification set is appropriate for designs that require a defined 1.6 GHz operating point, 32 Gbit memory capacity and a 1.1 V power domain.

This device is suitable for engineers and procurement teams specifying memory for mobile and embedded platforms where board area, power budget and thermal range are key constraints. Its combination of capacity, package and electrical characteristics supports scalable integration into space- and power-sensitive systems.

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