MT53D1024M32D4NQ-062 WT:D TR
| Part Description |
IC DRAM 32GBIT 1.6GHZ 200VFBGA |
|---|---|
| Quantity | 1,005 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 28 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 200-VFBGA (10x14.5) | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 1.6 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | 200-VFBGA | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 1G x 32 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0036 |
Overview of MT53D1024M32D4NQ-062 WT:D TR – IC DRAM 32GBIT 1.6GHZ 200VFBGA
The MT53D1024M32D4NQ-062 WT:D TR is a 32 Gbit volatile DRAM device manufactured by Micron Technology Inc., implemented as Mobile LPDDR4 SDRAM. It features a 1G x 32 memory organization and a 1.6 GHz clock frequency for high-speed memory operation.
Designed for compact, high-density memory integration, this device operates from a 1.1 V supply and is provided in a 200-ball VFBGA package (10 × 14.5 mm) with an ambient operating temperature range of -30°C to 85°C.
Key Features
- Memory Type Volatile DRAM implemented as Mobile LPDDR4 SDRAM, suitable where volatile dynamic memory is required.
- Capacity & Organization 32 Gbit total capacity arranged as 1G × 32, enabling high-density memory capacity in a single device.
- Clock Frequency 1.6 GHz clock frequency to support high-speed memory access patterns.
- Supply Voltage Operates from a 1.1 V supply, supporting low-voltage system designs.
- Package Supplied in a 200-VFBGA package (10 × 14.5 mm), providing a compact surface-mount footprint for space-constrained designs.
- Operating Temperature Rated for -30°C to 85°C ambient (TC), accommodating a wide range of environmental conditions.
- Manufacturer Produced by Micron Technology Inc., identifying the device source and traceability.
Unique Advantages
- High-density single-device solution: 32 Gbit capacity in a single 1G × 32 organization reduces system component count for high-capacity memory needs.
- High-speed operation: 1.6 GHz clock frequency supports demanding memory throughput requirements within the constraints of provided specifications.
- Low-voltage operation: 1.1 V supply reduces power demand compared to higher-voltage alternatives, aligning with power-sensitive system designs.
- Compact package footprint: 200-VFBGA (10 × 14.5 mm) enables integration into space-constrained PCBs while maintaining required ball-out for routing.
- Wide operating temperature: -30°C to 85°C rating supports deployment across varied ambient conditions.
- Established supplier: Manufactured by Micron Technology Inc., providing clear manufacturer identification for sourcing and lifecycle considerations.
Why Choose IC DRAM 32GBIT 1.6GHZ 200VFBGA?
This Mobile LPDDR4 SDRAM device balances high density, high-speed operation, and low-voltage operation in a compact 200-VFBGA package. It is suitable for designs that require a large-capacity volatile memory element with a 1.6 GHz operating clock and 1.1 V supply.
Choose this part when your application requires a single-package 32 Gbit memory solution with a defined operating temperature range and a compact surface-mount footprint from a known manufacturer.
Request a quote or contact sales to discuss pricing, availability, and lead times for MT53D1024M32D4NQ-062 WT:D TR.
