MT53D1024M32D4NQ-046 WT:D
| Part Description |
IC DRAM 32GBIT 2.133GHZ 200VFBGA |
|---|---|
| Quantity | 1,315 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 200-VFBGA (10x14.5) | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 2.133 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | 200-VFBGA | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 1G x 32 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | OBSOLETE | HTS Code | N/A |
Overview of MT53D1024M32D4NQ-046 WT:D – 32Gbit Mobile LPDDR4 DRAM, 2.133 GHz, 200-VFBGA
The MT53D1024M32D4NQ-046 WT:D is a 32 Gbit volatile DRAM device implemented in Mobile LPDDR4 SDRAM architecture. It delivers 1G x 32 memory organization with a clock frequency of 2.133 GHz and operates from a 1.1 V supply.
Housed in a compact 200-VFBGA (10 × 14.5 mm) package and specified for operation from −30°C to 85°C (TC), this device is targeted at mobile LPDDR4 memory subsystems where high-density, high-speed DRAM in a small footprint is required.
Key Features
- Memory Core 32 Gbit DRAM organized as 1G × 32, implemented in Mobile LPDDR4 SDRAM technology.
- High-Speed Operation Clock frequency rated at 2.133 GHz to support high-throughput memory access patterns.
- Low-Voltage Supply Operates from a 1.1 V supply, consistent with LPDDR4 power requirements.
- Package Supplied in a 200-VFBGA package (10 × 14.5 mm) for compact board integration.
- Operating Temperature Range Specified for −30°C to 85°C (TC), suitable for a range of thermal environments.
- Memory Format Volatile DRAM suitable for temporary high-speed storage in system memory subsystems.
Typical Applications
- Mobile devices — Provides high-density LPDDR4 memory capacity and 2.133 GHz operation for memory subsystems in mobile platforms.
- Compact embedded systems — The 200-VFBGA package enables space-efficient integration where board area is constrained.
- Thermally varied environments — The −30°C to 85°C operating range supports designs that encounter wide ambient temperature conditions.
Unique Advantages
- High memory density: 32 Gbit capacity in a single device simplifies BOM and supports higher system memory configurations.
- High-frequency performance: 2.133 GHz clock rate enables elevated data throughput for demanding memory subsystems.
- LPDDR4 architecture: Mobile LPDDR4 SDRAM technology aligns with industry memory standards for mobile applications.
- Compact package: 200-VFBGA (10 × 14.5 mm) package reduces PCB footprint for space-constrained designs.
- Low-voltage operation: 1.1 V supply supports designs that target LPDDR4 power domains.
- Broad temperature rating: −30°C to 85°C operational range for use across varied thermal conditions.
Why Choose IC DRAM 32GBIT 2.133GHZ 200VFBGA?
The MT53D1024M32D4NQ-046 WT:D combines high density, LPDDR4 SDRAM architecture, and a 2.133 GHz clock rate in a compact 200-VFBGA package. Its 1.1 V supply and specified operating temperature range make it suitable for mobile LPDDR4 memory subsystems and compact systems requiring high-speed, high-capacity volatile memory.
This device is well suited for design teams and procurement looking to integrate a verified 32 Gbit LPDDR4 DRAM component that balances capacity, speed, and a small physical footprint for scalable system memory implementations.
Request a quote or submit an inquiry for MT53D1024M32D4NQ-046 WT:D to receive pricing and availability information.
