MT53D1024M32D4NQ-046 AIT:D

The MT53D1024M32D4NQ-046 AIT:D is a 32 Gbit volatile DRAM device implemented in Mobile LPDDR4 SDRAM architecture. It delivers a 1G × 32 memory organization with a 2.133 GHz clock frequency and operates at a 1.1 V supply.

Designed for applications requiring high-density, high-speed memory in a compact package, this device addresses use cases where temperature range, automotive qualification and board-space efficiency are important design considerations.

Key Features

• Memory Architecture 
  Mobile LPDDR4 SDRAM technology with a 1G × 32 organization providing 32 Gbit total capacity.
• High Clock Frequency 
  2.133 GHz clock frequency for high-throughput memory transactions where timing performance is required.
• Supply Voltage 
  Operates at a 1.1 V supply voltage to match LPDDR4 power domains.
• Automotive Qualification 
  AEC‑Q100 qualified, supporting designs that require this industry qualification.
• Extended Temperature Range 
  Rated for operation from -40°C to 95°C (TC), suitable for wide-temperature environments.
• Compact Package 
  200‑VFBGA package (10 × 14.5 mm) for high-density board integration and reduced footprint.

Typical Applications

• Automotive electronic systems 
  Memory for automotive designs that require AEC‑Q100 qualification and extended temperature operation.
• Mobile and handheld devices 
  High-density LPDDR4 memory for compact systems requiring low-voltage operation and high clock rates.
• Embedded memory subsystems 
  Use as system DRAM where a 32 Gbit, 1G × 32 organization and 2.133 GHz performance are required.

Unique Advantages

• High memory density: 32 Gbit capacity provides substantial storage in a single device, reducing the number of components required.
• High-speed operation: 2.133 GHz clock frequency enables higher-throughput memory transactions for performance-oriented designs.
• Low-voltage operation: 1.1 V supply aligns with LPDDR4 power domains to support power-sensitive designs.
• Automotive-grade qualification: AEC‑Q100 qualification supports deployment in automotive applications that require that industry standard.
• Wide temperature tolerance: Rated from -40°C to 95°C (TC) for reliable operation across broad thermal environments.
• Space-efficient package: 200‑VFBGA (10 × 14.5 mm) package minimizes PCB area for compact system integration.

Why Choose IC DRAM 32GBIT 2.133GHZ 200VFBGA?

The MT53D1024M32D4NQ-046 AIT:D combines high memory density, a 2.133 GHz clock rate and LPDDR4 architecture to serve designs that need compact, high-performance DRAM. Its 1.1 V operation and 200‑VFBGA packaging make it suitable for space-constrained systems.

With AEC‑Q100 qualification and an operating range of -40°C to 95°C (TC), this device is positioned for applications where reliability across temperature and industry qualification matter. It is well suited for engineers developing automotive and embedded systems that require verified temperature and qualification characteristics.

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