MT53D1024M32D4DT-053 WT:D TR

The MT53D1024M32D4DT-053 WT:D TR is a 32 Gbit volatile DRAM device implemented in Mobile LPDDR4 SDRAM technology. It is organized as 1G × 32, operates at a clock frequency of 1.866 GHz, and is designed for applications requiring high-density memory in a compact BGA package.

Key device characteristics include a 1.1 V supply voltage and a 200-VFBGA (10 × 14.5 mm) package case, with an operating temperature range of −30°C to 85°C.

Key Features

• Memory Type & Technology Volatile SDRAM implemented as Mobile LPDDR4, providing a 32 Gbit memory capacity organized as 1G × 32.
• Performance Clock frequency of 1.866 GHz to support high-speed memory transactions within LPDDR4 architectures.
• Power 1.1 V supply voltage for low-voltage memory operation consistent with LPDDR4 requirements.
• Package 200-VFBGA package case in a 10 × 14.5 mm footprint for compact system integration.
• Operating Temperature Specified operating range from −30°C to 85°C (TC) to accommodate a range of thermal environments.
• Memory Format & Organization DRAM format with a 1G × 32 organization for straightforward integration into memory subsystems.

Typical Applications

• Mobile LPDDR4 systems — Serves as high-density LPDDR4 SDRAM for mobile designs requiring 32 Gbit memory capacity at 1.866 GHz.
• High-density memory modules — Used where a single 32 Gbit device in a 1G × 32 organization simplifies board-level memory architecture.
• Space-constrained designs — The 200-VFBGA (10 × 14.5 mm) package supports compact board layouts that require dense memory placement.
• Thermally variable environments — Rated for operation from −30°C to 85°C for designs that must tolerate a moderate temperature range.

Unique Advantages

• High-density 32 Gbit capacity: Reduces the need for multiple DRAM devices when a single high-capacity memory element is required.
• Mobile LPDDR4 technology: Implements LPDDR4 SDRAM architecture for designs targeting mobile or low-voltage memory standards.
• High clock rate: 1.866 GHz operation supports faster memory throughput for bandwidth-sensitive tasks.
• Low-voltage operation: 1.1 V supply supports reduced-power memory operation within LPDDR4 specifications.
• Compact VFBGA package: 200-VFBGA (10 × 14.5 mm) enables space-efficient board design and dense component placement.
• Wide operating temperature: −30°C to 85°C rating accommodates deployments across a range of thermal conditions.

Why Choose MT53D1024M32D4DT-053 WT:D TR?

The MT53D1024M32D4DT-053 WT:D TR positions itself as a high-density Mobile LPDDR4 DRAM device offering 32 Gbit capacity in a compact 200-VFBGA package. Its 1.866 GHz clock frequency and 1.1 V supply address designs that require fast, low-voltage memory within LPDDR4 architectures.

This device is suitable for engineers and procurement teams specifying high-capacity LPDDR4 memory where board space, operating temperature range, and standard LPDDR4 electrical characteristics are primary selection criteria. Sourcing this device from Micron Technology Inc. provides a clearly defined feature set for integration into compatible memory subsystems.

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