MT53D1024M32D4DT-053 WT ES:D
| Part Description |
IC DRAM 32GBIT 1.866GHZ 200VFBGA |
|---|---|
| Quantity | 144 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 200-VFBGA (10x14.5) | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 1.866 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | 200-VFBGA | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 1G x 32 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | OBSOLETE | HTS Code | N/A |
Overview of MT53D1024M32D4DT-053 WT ES:D – IC DRAM 32GBIT 1.866GHZ 200VFBGA
The MT53D1024M32D4DT-053 WT ES:D is a 32 Gbit volatile DRAM device implemented in Mobile LPDDR4 SDRAM architecture and manufactured by Micron Technology Inc. It delivers a 1.866 GHz clock rate in a compact 200‑VFBGA (10 × 14.5 mm) package.
This device is targeted at space‑constrained, high‑density mobile memory implementations where high data rate and low supply voltage are primary considerations. Key value comes from its high density, mobile LPDDR4 technology and 1.1 V supply voltage.
Key Features
- Memory Architecture 32 Gbit DRAM organized as 1G × 32 using Mobile LPDDR4 SDRAM technology.
- Performance Operates at a clock frequency of 1.866 GHz for high data‑rate memory access.
- Power 1.1 V supply voltage consistent with mobile LPDDR4 designs for reduced power draw compared to higher‑voltage DRAM options.
- Package 200‑VFBGA package (10 × 14.5 mm) for compact board integration in space‑limited designs.
- Operating Temperature Rated for −30 °C to 85 °C (TC), supporting extended temperature operation within that range.
- Device Type Volatile DRAM memory formatted as DRAM for temporary data storage in system memory subsystems.
Typical Applications
- Mobile devices Suited for high‑density mobile memory subsystems where LPDDR4 technology and a 1.1 V supply are required.
- Portable computing Applicable to compact computing platforms that need a 32 Gbit DRAM in a small 200‑VFBGA package.
- Embedded mobile systems Used in embedded designs that leverage mobile SDRAM for transient data storage with a wide operating temperature range.
Unique Advantages
- High memory density: 32 Gbit capacity enables compact designs requiring large volatile storage without multiple devices.
- High data rate: 1.866 GHz clock frequency supports demanding memory throughput requirements within the LPDDR4 class.
- Low supply voltage: 1.1 V operation reduces power consumption relative to higher‑voltage memory options.
- Compact package: 200‑VFBGA (10 × 14.5 mm) package eases integration into space‑constrained PCBs.
- Extended temperature operation: −30 °C to 85 °C (TC) rating supports a range of environmental conditions.
Why Choose IC DRAM 32GBIT 1.866GHZ 200VFBGA?
The MT53D1024M32D4DT-053 WT ES:D combines Mobile LPDDR4 architecture with a 32 Gbit density and a 1.866 GHz clock rate, making it suitable for designs that require high data rates in a compact footprint. Its 1.1 V supply and 200‑VFBGA package align with mobile and space‑constrained system requirements, while the specified operating temperature range supports extended environment use.
This device is appropriate for engineers and procurement teams building mobile memory subsystems or compact embedded platforms that need verified LPDDR4 DRAM density and performance from Micron Technology Inc.
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