MT53D1024M32D4DT-053 AIT:D

IC DRAM 32GBIT 1.866GHZ 200VFBGA
Part Description

IC DRAM 32GBIT 1.866GHZ 200VFBGA

Quantity 1,176 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package200-VFBGA (10x14.5)Memory FormatDRAMTechnologySDRAM - Mobile LPDDR4
Memory Size32 GbitAccess TimeN/AGradeAutomotive
Clock Frequency1.866 GHzVoltage1.1VMemory TypeVolatile
Operating Temperature-40°C ~ 95°C (TC)Write Cycle Time Word PageN/APackaging200-VFBGA
Mounting MethodVolatileMemory InterfaceN/AMemory Organization1G x 32
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationAEC-Q100ECCNEAR99HTS Code8542.32.0036

Overview of MT53D1024M32D4DT-053 AIT:D – IC DRAM 32 Gbit 1.866 GHz 200-VFBGA

The MT53D1024M32D4DT-053 AIT:D is a volatile DRAM device implemented in Mobile LPDDR4 SDRAM architecture. It provides a 32 Gbit memory organized as 1G × 32 with a 1.866 GHz clock frequency and a 1.1 V supply requirement.

Qualified to AEC-Q100 and specified over an operating temperature range of −40°C to 95°C (TC), this device targets designs requiring high-density LPDDR4 memory in automotive-grade and temperature-sensitive applications. The device is offered in a 200-VFBGA (10 × 14.5 mm) package for compact board integration.

Key Features

  • Memory Core Volatile DRAM implemented as Mobile LPDDR4 SDRAM with a memory size of 32 Gbit organized as 1G × 32.
  • Clock and Performance Rated clock frequency of 1.866 GHz for high-rate data transfer in LPDDR4 memory systems.
  • Power Low-voltage operation with a specified supply voltage of 1.1 V.
  • Package 200-VFBGA package; supplier device package specified as 200-VFBGA (10 × 14.5 mm) for compact footprint and surface mounting.
  • Temperature and Qualification Operating temperature range −40°C to 95°C (TC) and AEC-Q100 qualification; device grade listed as Automotive.
  • Mounting Type MountingType: Volatile.

Typical Applications

  • Automotive systems — AEC-Q100 qualification and −40°C to 95°C operating range enable use in automotive electronic modules that require LPDDR4 memory density.
  • Mobile LPDDR4 designs — The Mobile LPDDR4 architecture and 1.866 GHz clock frequency support high-rate memory requirements in compact system designs.
  • Temperature-sensitive embedded equipment — Specified operating temperature range and automotive grade make the device suitable for embedded systems operating across extended temperatures.

Unique Advantages

  • High-density memory: 32 Gbit capacity (1G × 32) provides substantial on-board DRAM density for memory-intensive applications.
  • High data-rate timing: 1.866 GHz clock frequency supports high-rate LPDDR4 data transfers where throughput is required.
  • Low-voltage operation: 1.1 V supply reduces power draw relative to higher-voltage memory options.
  • Automotive qualification: AEC-Q100 qualification combined with an Automotive grade designation supports designs requiring qualified components.
  • Compact BGA footprint: 200-VFBGA (10 × 14.5 mm) package enables dense PCB layouts and surface-mount assembly.

Why Choose MT53D1024M32D4DT-053 AIT:D?

The MT53D1024M32D4DT-053 AIT:D combines Mobile LPDDR4 architecture, 32 Gbit density, and a 1.866 GHz operating clock to deliver a balanced solution for designs that demand high-density, high-rate volatile memory. Its 1.1 V supply and 200-VFBGA package support compact, power-conscious implementations.

With AEC-Q100 qualification and an extended operating temperature range of −40°C to 95°C, the device is positioned for customers developing automotive-grade and temperature-challenged embedded systems that require verified component qualification and stable operating characteristics. The product is manufactured by Micron Technology Inc.

Request a quote or contact sales to submit a quote for the MT53D1024M32D4DT-053 AIT:D and discuss pricing, lead times, or volume availability.

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