MT53D1024M32D4NQ-046 AAT ES :D

The MT53D1024M32D4NQ-046 AAT ES :D is a 32 Gbit volatile DRAM device implemented in Mobile LPDDR4 SDRAM architecture. It is organized as 1G x 32 with a specified clock frequency of 2.133 GHz and a 1.1 V supply.

Designed for applications that require high-density, high-speed memory in a compact package, this device is offered in a 200-VFBGA (10 × 14.5) package and carries AEC-Q100 qualification with an operating temperature range of -40°C to 105°C.

Key Features

• Memory Core  32 Gbit capacity organized as 1G × 32 using Mobile LPDDR4 SDRAM technology, supporting high-density memory requirements.
• Performance  Rated clock frequency of 2.133 GHz for high-speed memory operation.
• Power  1.1 V nominal supply voltage as specified for Mobile LPDDR4 operation.
• Package  200-VFBGA package (10 × 14.5 mm) providing a compact footprint for space-constrained designs.
• Automotive Qualification & Temperature Range  AEC-Q100 qualified and specified for -40°C to 105°C (TC), suitable for applications requiring automotive-grade qualification.
• Device Type  Volatile DRAM memory format optimized for systems needing transient, high-speed data storage.

Typical Applications

• Automotive Systems  Suitable for automotive electronics that require AEC-Q100 qualified, high-density LPDDR4 memory within a wide temperature range.
• Embedded and SoC Memory  Used as high-speed external memory for embedded processors and system-on-chip designs requiring 1G × 32 organization.
• Infotainment and In-Vehicle Systems  Provides compact, high-capacity memory in a 200-VFBGA package for infotainment modules and vehicle data buffering.

Unique Advantages

• High Density (32 Gbit): Enables large memory capacity in a single device, reducing system BOM for high-capacity requirements.
• High-Speed Operation (2.133 GHz): Supports fast memory access patterns and high-frequency system designs.
• AEC-Q100 Qualified: Meets automotive qualification standards for designs that require verified component reliability.
• Wide Operating Temperature: Rated from -40°C to 105°C (TC), allowing deployment in temperature-stressed environments.
• Compact 200-VFBGA Package (10 × 14.5 mm): Small footprint simplifies board integration in space-constrained assemblies.
• Standard 1.1 V Supply: Operates at industry-standard LPDDR4 voltage for compatibility with LPDDR4 system power rails.

Why Choose IC DRAM 32GBIT 2.133GHZ 200VFBGA?

The MT53D1024M32D4NQ-046 AAT ES :D combines 32 Gbit LPDDR4 density and 2.133 GHz operation in a compact 200-VFBGA package, offering a balance of capacity and speed for designs that demand high-performance memory. Its AEC-Q100 qualification and -40°C to 105°C operating range position it for automotive and other temperature-critical applications.

From Micron Technology Inc., this device is appropriate for engineers specifying automotive-grade LPDDR4 memory where verified qualification, compact packaging, and high clock rates are required. It delivers a clear specification set for integration into long-lived, robust system designs.

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