MT53D1024M32D4NQ-046 AIT ES:D

The MT53D1024M32D4NQ-046 AIT ES:D is a 32 Gbit volatile DRAM device implemented in Mobile LPDDR4 SDRAM technology. It delivers 1G × 32 organization and supports a clock frequency of 2.133 GHz for high‑speed memory operations.

Designed and qualified for automotive use, this device combines high density, low supply voltage, and a compact 200‑VFBGA package to address space‑constrained, temperature‑challenging environments where robust, high‑throughput memory is required.

Key Features

• Memory Core 32 Gbit capacity organized as 1G × 32 in Mobile LPDDR4 SDRAM architecture for high‑density volatile storage.
• Performance 2.133 GHz clock frequency to support high‑speed data transfer requirements.
• Power 1.1 V supply voltage for low‑voltage operation consistent with LPDDR4 technology.
• Package 200‑VFBGA package (10 × 14.5 mm) providing a compact footprint for space‑sensitive board designs.
• Automotive Qualification AEC‑Q100 qualification and Grade: Automotive designation for use in applications requiring automotive‑level component qualification.
• Temperature Range Operating temperature from −40 °C to 95 °C (TC) to support extended and harsh thermal environments.
• Memory Type Volatile DRAM format suitable for high‑bandwidth buffering and working memory functions.

Typical Applications

• Automotive systems — Suitable for in‑vehicle systems that require AEC‑Q100 qualified high‑speed memory within the −40 °C to 95 °C operating range.
• Mobile and embedded platforms — Mobile LPDDR4 architecture and 1.1 V operation make it applicable for compact, power‑sensitive designs needing high throughput.
• High‑speed buffering — 2.133 GHz clocking supports applications that require fast transient data storage and retrieval.

Unique Advantages

• High density in a compact package: 32 Gbit capacity in a 200‑VFBGA (10 × 14.5 mm) package reduces board area for space‑constrained designs.
• High‑speed operation: 2.133 GHz clock frequency enables elevated data bandwidth for performance‑sensitive functions.
• Low‑voltage operation: 1.1 V supply supports lower power consumption consistent with LPDDR4 systems.
• Automotive qualification: AEC‑Q100 qualification and automotive grade designation provide documented component qualification for automotive use cases.
• Wide operating temperature: −40 °C to 95 °C rating supports deployment in thermally demanding environments.

Why Choose MT53D1024M32D4NQ-046 AIT ES:D?

The MT53D1024M32D4NQ-046 AIT ES:D positions itself as a high‑density, high‑speed Mobile LPDDR4 DRAM option that balances performance, power efficiency, and automotive‑grade qualification. Its combination of 32 Gbit capacity, 2.133 GHz clocking, and 1.1 V operation makes it suited for designs that require substantial working memory with constrained power and board space.

This device is ideal for engineers and procurement teams specifying qualified memory for automotive and embedded systems where temperature range, qualification status, and a compact package are critical to long‑term system robustness and integration.

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