MT53D1024M64D8PM-053 WT:D
| Part Description |
IC DRAM 64GBIT 1.866GHZ |
|---|---|
| Quantity | 1,371 Available (as of May 6, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | N/A | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 1.866 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | N/A | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 1G x 64 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0036 |
Overview of MT53D1024M64D8PM-053 WT:D – IC DRAM 64GBIT 1.866GHZ
The MT53D1024M64D8PM-053 WT:D is a 64 Gbit volatile DRAM device implemented in Mobile LPDDR4 SDRAM technology. It provides a 1G × 64 memory organization and supports a clock frequency of 1.866 GHz for high-rate memory operation.
Targeted at designs that require high-density, mobile LPDDR4 memory, the device delivers a combination of density, clock performance, and low-voltage operation suitable for memory subsystems in mobile and portable applications.
Key Features
- Memory Type and Technology Mobile LPDDR4 SDRAM technology providing volatile DRAM storage suitable for mobile-oriented memory architectures.
- Density and Organization 64 Gbit capacity arranged as 1G × 64, enabling high-density memory implementations in a single device.
- Clock Performance Rated for a clock frequency of 1.866 GHz to support high data-rate operation within the specified memory technology.
- Voltage Supply Operates at a 1.1 V supply, reflecting low-voltage operation consistent with mobile LPDDR4 designs.
- Operating Temperature Specified operating temperature range of −30°C to 85°C (TC) for use across a range of ambient conditions.
Typical Applications
- Mobile and handheld devices High-density LPDDR4 memory for systems that require 64 Gbit DRAM capacity and 1.866 GHz operation.
- Portable consumer electronics Use where low-voltage (1.1 V) DRAM with wide temperature range is needed to manage power and thermal constraints.
- Embedded memory subsystems Suitable for designs that integrate mobile LPDDR4 SDRAM to meet compact, high-capacity memory requirements.
Unique Advantages
- High memory density: 64 Gbit capacity reduces the number of devices required to achieve large memory pools.
- High data-rate capability: 1.866 GHz clock frequency supports higher throughput within the device's specified technology.
- Low-voltage operation: 1.1 V supply helps reduce overall power consumption in voltage-sensitive designs.
- Wide operating temperature: −30°C to 85°C range enables deployment across varied environmental conditions.
- Mobile LPDDR4 technology: Architecture aligned with mobile-oriented DRAM requirements for compact, high-performance memory solutions.
Why Choose IC DRAM 64GBIT 1.866GHZ?
The MT53D1024M64D8PM-053 WT:D provides a practical combination of high density, LPDDR4 mobile technology, and a 1.866 GHz clock rating, making it suitable for designs that need compact, high-capacity DRAM implemented at low supply voltage. Its specified temperature range and 1G × 64 organization support integration into systems requiring predictable memory capacity and operating envelope.
Manufactured by Micron Technology Inc., this device offers a straightforward option for designers and procurement teams seeking a 64 Gbit mobile LPDDR4 DRAM solution with explicit specification of clock frequency, voltage, and operating temperature.
Request a quote or submit an inquiry for the MT53D1024M64D8PM-053 WT:D to discuss availability, pricing, and lead time for your project requirements.
