MT53D1G32D4BD-053 WT ES:D
| Part Description |
IC DRAM 32GBIT 1.866GHZ FBGA QDP |
|---|---|
| Quantity | 445 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | N/A | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 1.866 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | N/A | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 1G x 32 | ||
| Moisture Sensitivity Level | 1 (Unlimited) | RoHS Compliance | Unknown | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | OBSOLETE | HTS Code | N/A |
Overview of MT53D1G32D4BD-053 WT ES:D – IC DRAM 32GBIT 1.866GHZ FBGA QDP
The MT53D1G32D4BD-053 WT ES:D is a volatile DRAM device built on Mobile LPDDR4 SDRAM technology. It provides 32 Gbit of memory organized as 1G × 32 and is specified for operation at a clock frequency of 1.866 GHz.
This device operates from a 1.1 V supply and is offered in a FBGA QDP package variant, with an operating temperature range of −30°C to 85°C (TC).
Key Features
- Memory Core Mobile LPDDR4 SDRAM architecture; volatile DRAM with a total capacity of 32 Gbit.
- Organization Arranged as 1G × 32, providing a wide data path for system memory integration.
- Performance Specified clock frequency of 1.866 GHz for high-rate memory operation.
- Power Operates from a 1.1 V supply voltage for low-voltage memory operation.
- Package Delivered in an FBGA QDP package variant as indicated in the product designation.
- Temperature Range Rated for operation from −30°C to 85°C (TC).
Unique Advantages
- High-density 32 Gbit capacity: Provides substantial memory capacity within a single device for compact implementations requiring large memory footprints.
- High data-rate operation: 1.866 GHz clock frequency supports high-throughput memory transactions where specified by system design.
- Low-voltage operation: 1.1 V supply supports lower-voltage system designs and can contribute to reduced power budget when used per system requirements.
- Wide data organization: 1G × 32 organization offers a broad data path for integration into systems expecting 32-bit memory lanes.
- Extended operating temperature: −30°C to 85°C rating supports deployment in environments within that thermal range.
Why Choose MT53D1G32D4BD-053 WT ES:D?
The MT53D1G32D4BD-053 WT ES:D combines Mobile LPDDR4 architecture, high-density 32 Gbit capacity, and a 1.866 GHz operating frequency to deliver a specification-driven memory option for designs that require these exact characteristics. Its 1G × 32 organization and 1.1 V supply voltage align with systems designed around LPDDR4 memory interfaces and low-voltage operation.
This device is appropriate for projects and designs that explicitly require a 32 Gbit LPDDR4 device with the listed clock, voltage, and temperature specifications. Its defined electrical and thermal parameters provide clear, verifiable attributes for system integration and long-term product planning.
If you would like pricing or availability information, request a quote or submit a product inquiry to our sales team quoting MT53D1G32D4BD-053 WT ES:D.
