MT53D1G64D8NW-046 WT ES:E
| Part Description |
IC DRAM 64GBIT 2.133GHZ FBGA 8DP |
|---|---|
| Quantity | 189 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | N/A | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 2.133 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | N/A | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 1G x 64 | ||
| Moisture Sensitivity Level | 1 (Unlimited) | RoHS Compliance | Unknown | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | OBSOLETE | HTS Code | N/A |
Overview of MT53D1G64D8NW-046 WT ES:E – IC DRAM 64GBIT 2.133GHZ FBGA 8DP
The MT53D1G64D8NW-046 WT ES:E is a 64 Gbit volatile DRAM device implemented in mobile LPDDR4 SDRAM technology. It is organized as 1G × 64 and specified for operation at a clock frequency of 2.133 GHz with a supply voltage of 1.1 V.
This device is intended for designs that require high-density mobile LPDDR4 memory operating across a temperature range of −30°C to 85°C, providing a compact FBGA 8DP package option as indicated in the product designation.
Key Features
- Memory Technology Mobile LPDDR4 SDRAM architecture designed for volatile memory applications.
- Density and Organization 64 Gbit capacity organized as 1G × 64 to support wide data paths and high capacity per device.
- High-Frequency Operation Rated clock frequency of 2.133 GHz for high-throughput memory operations.
- Low Voltage Supply 1.1 V nominal supply to align with low-power system designs.
- Operating Temperature Range Specified for −30°C to 85°C (TC) to support a range of environmental conditions.
- Package Indication Designated as FBGA 8DP in the product name for compact board-level integration.
Typical Applications
- Mobile memory subsystems Provides high-density LPDDR4 memory capacity and bandwidth suitable for mobile-oriented memory requirements.
- Embedded platforms Used in embedded designs that require 64 Gbit volatile DRAM with low-voltage operation.
- High-throughput data buffering Acts as a high-frequency DRAM resource for systems needing fast data exchange at 2.133 GHz.
Unique Advantages
- 64 Gbit capacity: High device density enables reduced component count for large-memory designs.
- 1G × 64 organization: Wide data bus organization supports efficient 64-bit data transfers within system memory architectures.
- 2.133 GHz operation: Elevated clock frequency provides increased memory throughput where required.
- 1.1 V supply: Low-voltage operation helps reduce power consumption relative to higher-voltage memory options.
- Extended temperature range: −30°C to 85°C rating permits use across a variety of environmental conditions.
- Compact FBGA 8DP designation: Package indication in the product name supports compact, board-level integration.
Why Choose IC DRAM 64GBIT 2.133GHZ FBGA 8DP?
This Micron-designated mobile LPDDR4 DRAM combines 64 Gbit density, 1G × 64 organization, and 2.133 GHz clocking with a 1.1 V supply to address designs that need high-capacity, high-frequency volatile memory in a compact package form. The specified operating temperature range of −30°C to 85°C makes the device suitable for systems operating across a range of conditions.
The MT53D1G64D8NW-046 WT ES:E is appropriate for engineers and procurement teams targeting mobile LPDDR4 memory solutions where density, bandwidth, and low-voltage operation are required. Its feature set supports scalable memory architectures and integration into space-constrained board designs.
Request a quote or contact sales to discuss availability, lead times, and to obtain pricing and ordering information for the MT53D1G64D8NW-046 WT ES:E.
