MT53D1G64D8SQ-053 WT ES:E

The MT53D1G64D8SQ-053 WT ES:E from Micron Technology Inc. is a volatile DRAM device implemented in Mobile LPDDR4 SDRAM technology. It provides a 64 Gbit memory capacity organized as 1G × 64 with a 1.866 GHz clock frequency and operates from a 1.1 V supply.

This device is supplied in a 556-VFBGA package (12.4×12.4 mm) and supports an operating temperature range of -30°C to 85°C, making it suitable for designs that require high-density LPDDR4 memory in a compact package.

Key Features

• Core / Technology  Mobile LPDDR4 SDRAM architecture designed for volatile memory applications.
• Memory Capacity & Organization  64 Gbit total capacity organized as 1G × 64 to support wide data paths and high aggregate throughput.
• Clock Frequency  1.866 GHz clock frequency for high-speed DRAM operation as specified in the product data.
• Voltage Supply  Operates from a 1.1 V supply, reflecting low-voltage LPDDR4 operation documented for this part.
• Package  556-VFBGA package with package dimensions of 12.4×12.4 mm for compact board-level integration.
• Operating Temperature Range  Rated for -30°C to 85°C (TC), supporting a broad thermal envelope for system deployment.
• Memory Format  DRAM — volatile memory type intended for temporary data storage in active systems.

Typical Applications

• Mobile devices  Used as LPDDR4 system memory in mobile-focused designs where the Mobile LPDDR4 technology is required.
• High-density memory subsystems  Employed in systems needing a 64 Gbit DRAM component organized as 1G × 64 to expand working memory.
• Embedded platforms  Integrated into embedded designs that require volatile DRAM in a compact 556-VFBGA package and wide operating temperature range.

Unique Advantages

• High frequency operation: The 1.866 GHz clock frequency supports high-speed DRAM access as specified for this device.
• Large memory capacity: 64 Gbit density enables substantial on-board volatile storage without increasing module count.
• Low-voltage design: 1.1 V supply aligns with LPDDR4 low-voltage operation to reduce power draw at the device level.
• Compact package: 556-VFBGA (12.4×12.4 mm) offers a small footprint for space-constrained board layouts.
• Wide operating temperature: Rated from -30°C to 85°C to accommodate a range of environmental conditions.
• Wide data organization: 1G × 64 organization provides a broad data interface footprint for system memory architectures.

Why Choose MT53D1G64D8SQ-053 WT ES:E?

The MT53D1G64D8SQ-053 WT ES:E combines Mobile LPDDR4 technology with a high operating frequency and large 64 Gbit density to address designs requiring compact, high-capacity volatile memory. Its 1.1 V supply and 556-VFBGA (12.4×12.4 mm) packaging allow for integration into space-constrained systems while supporting the electrical characteristics specified for LPDDR4 operation.

This part is positioned for engineers and designers who need a high-density LPDDR4 DRAM device with defined operating temperature and package dimensions. It provides clear specification points—capacity, organization, clock frequency, voltage, package, and temperature—that help in system-level planning and long-term memory scaling.

To request a quote or discuss availability and pricing for the MT53D1G64D8SQ-053 WT ES:E, please contact sales or submit a quote request through your preferred procurement channel.