MT53D1G64D8SQ-053 WT ES:E TR

The MT53D1G64D8SQ-053 WT ES:E TR is a 64 Gbit volatile DRAM device based on SDRAM - Mobile LPDDR4 technology. It provides a 1G x 64 memory organization and a 1.866 GHz clock frequency targeted at designs requiring Mobile LPDDR4 memory in a compact 556-VFBGA package.

Key attributes include a 1.1V supply and an operating temperature range of -30°C ~ 85°C (TC), making the device suitable for systems that need high-density LPDDR4 memory within those electrical and environmental parameters.

Key Features

• Memory Core SDRAM - Mobile LPDDR4 technology with a total capacity of 64 Gbit and a memory organization of 1G x 64.
• Clock Frequency Rated for operation at 1.866 GHz to meet the timing requirements associated with the specified LPDDR4 clocking.
• Power Single voltage supply of 1.1V consistent with Mobile LPDDR4 signaling and power domains.
• Package 556-VFBGA package with package notation (12.4x12.4) suitable for board-level integration in space-constrained assemblies.
• Memory Format & Mounting Volatile DRAM memory format intended for surface-mounted applications.
• Operating Temperature Specified temperature range of -30°C ~ 85°C (TC) for device operation.

Typical Applications

• Mobile devices and platforms — Use where Mobile LPDDR4 SDRAM is required to provide high-density volatile memory in mobile-oriented system designs.
• Memory module integration — Suitable for modules or subsystems that integrate 64 Gbit LPDDR4 devices in a 556-VFBGA footprint.
• Embedded systems with constrained board area — Provides a compact, high-density DRAM option for space-limited embedded designs operating within the specified temperature range.

Unique Advantages

• High memory density: 64 Gbit capacity and 1G x 64 organization enable compact implementations of large volatile memory.
• Mobile LPDDR4 architecture: SDRAM - Mobile LPDDR4 technology aligns with LPDDR4 system designs and related signaling domains.
• Specified clock performance: 1.866 GHz clock frequency supports the timing characteristics expected of the device.
• Low-voltage operation: 1.1V supply supports designs targeting LPDDR4 voltage domains.
• Compact package: 556-VFBGA (12.4x12.4) package enables dense board-level placement.
• Extended operating range: -30°C ~ 85°C (TC) rating covers a range of operating environments.

Why Choose IC DRAM 64GBIT 1.866GHZ 556VFBGA?

This Micron-manufactured LPDDR4 DRAM device combines 64 Gbit capacity, a 1G x 64 organization, and a 1.866 GHz clock frequency in a 556-VFBGA (12.4x12.4) package with a 1.1V supply and a -30°C ~ 85°C (TC) operating range. Its specifications align with designs that require Mobile LPDDR4 memory density and compatible electrical characteristics.

The device is appropriate for system designers and module integrators seeking a compact, high-density volatile memory component for LPDDR4-based platforms where the listed operating temperature and supply voltage meet system requirements.

Request a quote or contact sales to discuss availability, pricing, and how this MT53D1G64D8SQ-053 WT ES:E TR device can fit your LPDDR4 memory design requirements.