MT53D1G64D8SQ-053 WT:E
| Part Description |
IC DRAM 64GBIT 1.866GHZ 556VFBGA |
|---|---|
| Quantity | 1,186 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 556-VFBGA (12.4x12.4) | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 1.866 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | 556-VFBGA | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 1G x 64 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0036 |
Overview of MT53D1G64D8SQ-053 WT:E – IC DRAM 64GBIT 1.866GHZ 556VFBGA
The MT53D1G64D8SQ-053 WT:E is a 64 Gbit DRAM device implemented as mobile LPDDR4 SDRAM. It combines a 1G x 64 memory organization with 1.866 GHz clocking to deliver high-capacity, high-frequency memory in a compact ball-grid package.
This device is suited for designs that require dense, high-speed mobile LPDDR4 memory implemented in a 556-VFBGA (12.4 × 12.4 mm) package and operating from a 1.1 V supply across a -30°C to 85°C temperature range.
Key Features
- Core / Memory Architecture Mobile LPDDR4 SDRAM with a memory organization of 1G × 64 for a total memory size of 64 Gbit.
- High-Frequency Operation Rated clock frequency of 1.866 GHz to support high-bandwidth memory access patterns.
- Supply Voltage Single 1.1 V voltage supply as specified for the device.
- Package 556-VFBGA package with a 12.4 × 12.4 mm footprint for compact board integration.
- Operating Temperature Range Specified operating temperature from -30°C to 85°C (TC) for extended environmental tolerance.
Typical Applications
- Mobile devices — Provides high-density LPDDR4 memory for mobile platforms requiring compact, high-frequency DRAM.
- Portable electronics — Suited for handheld systems where board space and memory capacity are constrained.
- Embedded memory subsystems — Used where a 1G × 64 arrangement and 1.866 GHz operation are required for system memory.
Unique Advantages
- High-density memory: 64 Gbit capacity enables large memory footprints in a single device, reducing the need for multiple components.
- High-speed operation: 1.866 GHz clock frequency supports demanding bandwidth requirements within the LPDDR4 class.
- Compact package: 556-VFBGA (12.4 × 12.4 mm) footprint enables integration into space-constrained designs.
- Standard voltage: 1.1 V supply simplifies power-rail planning for LPDDR4-based systems.
- Wide temperature range: -30°C to 85°C operating range supports deployment across varied environmental conditions.
- Micron manufacturing: Produced by Micron Technology Inc., providing component traceability to a known memory manufacturer.
Why Choose IC DRAM 64GBIT 1.866GHZ 556VFBGA?
The MT53D1G64D8SQ-053 WT:E positions itself as a high-capacity, high-frequency LPDDR4 DRAM option for designs needing a compact, board-friendly memory solution. Its 1G × 64 organization and 1.866 GHz operation make it suitable for applications that require sustained high-bandwidth memory in a small footprint.
This device is appropriate for engineers and procurement teams targeting mobile and portable systems where memory density, package size, and defined operating temperature and voltage specs are primary selection criteria. Backed by Micron Technology Inc., it provides a traceable option for LPDDR4 memory integration.
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