MT53D1G64D8SQ-053 WT:E TR
| Part Description |
IC DRAM 64GBIT 1.866GHZ 556VFBGA |
|---|---|
| Quantity | 470 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 556-VFBGA (12.4x12.4) | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 1.866 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | 556-VFBGA | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 1G x 64 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0036 |
Overview of MT53D1G64D8SQ-053 WT:E TR – Mobile LPDDR4 DRAM 64 Gbit 1.866 GHz
The MT53D1G64D8SQ-053 WT:E TR is a 64 Gbit volatile DRAM device implementing Mobile LPDDR4 SDRAM technology. It is organized as 1G × 64 and specified to operate at a clock frequency of 1.866 GHz.
Designed for systems requiring high-density, high-frequency mobile LPDDR4 memory, this device operates at a 1.1 V supply and is supplied in a 556‑VFBGA package (12.4 × 12.4 mm). The device is rated for an operating temperature range of −30°C to 85°C (TC).
Key Features
- Memory Core & Architecture Mobile LPDDR4 SDRAM implementation organized as 1G × 64 supporting a total memory size of 64 Gbit and a clock frequency of 1.866 GHz.
- Memory Type & Format Volatile DRAM memory format suitable for dynamic system memory applications.
- Power Operates from a 1.1 V supply, consistent with low-voltage Mobile LPDDR4 requirements.
- Package 556‑VFBGA package case with supplier package dimensions 12.4 × 12.4 mm, suitable for surface-mount assembly.
- Temperature Range Specified operating temperature −30°C to 85°C (TC).
- Mounting Provided as a volatile memory device for surface-mount system integration.
Typical Applications
- Mobile LPDDR4 systems — Serves as system memory in designs that implement Mobile LPDDR4 architecture and require 64 Gbit density and 1.866 GHz operation.
- Embedded memory subsystems — Suitable for embedded platforms that need a 1G × 64 DRAM organization and low-voltage 1.1 V operation.
- High-bandwidth memory arrays — Applicable where a 1.866 GHz clock frequency and 64 Gbit capacity are specified.
Unique Advantages
- High density (64 Gbit): Enables compact designs by providing large capacity in a single DRAM device.
- High clock frequency (1.866 GHz): Supports higher data-rate operation where supported by system architecture.
- Low-voltage operation (1.1 V): Aligns with Mobile LPDDR4 power domains to help manage supply constraints.
- Standard VFBGA package (12.4 × 12.4 mm): Facilitates surface-mount integration in tight PCB footprints.
- Broad operating temperature range: Rated from −30°C to 85°C (TC) to cover a variety of thermal environments.
Why Choose IC DRAM 64GBIT 1.866GHZ 556VFBGA?
The MT53D1G64D8SQ-053 WT:E TR from Micron Technology Inc. combines Mobile LPDDR4 SDRAM architecture, 64 Gbit density, and 1.866 GHz operation in a compact 556‑VFBGA package. Its 1.1 V supply requirement and specified −30°C to 85°C operating range make it a suitable option for systems that require high-density, high-frequency mobile memory implemented in a standard surface-mount package.
This device is appropriate for designers and procurement teams specifying Mobile LPDDR4 memory where capacity, clock frequency, package size, and temperature range are key selection criteria. Its defined electrical and mechanical parameters support predictable integration into memory subsystems.
Request a quote or submit an inquiry to discuss availability, lead time, and pricing for the MT53D1G64D8SQ-053 WT:E TR.
