MT53D2048M32D8QD-046 WT ES:D
| Part Description |
IC DRAM 64GBIT 2.133GHZ FBGA |
|---|---|
| Quantity | 5 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | N/A | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 2.133 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | N/A | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 2G x 32 | ||
| Moisture Sensitivity Level | 1 (Unlimited) | RoHS Compliance | Unknown | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | OBSOLETE | HTS Code | N/A |
Overview of MT53D2048M32D8QD-046 WT ES:D – IC DRAM 64GBIT 2.133GHZ FBGA
The MT53D2048M32D8QD-046 WT ES:D is a volatile DRAM memory IC based on Mobile LPDDR4 technology. It provides 64 Gbit density implemented as 2G × 32 with a nominal clock frequency of 2.133 GHz and a 1.1 V supply.
Its specified operating temperature range is −30°C to 85°C (TC), making it suitable for designs that require high-speed LPDDR4 memory at this density and temperature range.
Key Features
- Memory Technology Mobile LPDDR4 architecture for volatile DRAM functionality.
- Density & Organization 64 Gbit total capacity, organized as 2G × 32 to support wide-data implementations.
- Clock Frequency Rated for operation at 2.133 GHz clock frequency.
- Supply Voltage Operates at a 1.1 V supply.
- Temperature Range Specified operating temperature from −30°C to 85°C (TC).
- Memory Format & Mounting DRAM memory in a volatile mounting format.
- Manufacturer Produced by Micron Technology Inc.
Typical Applications
- High-density memory subsystems — Use where 64 Gbit of volatile DRAM capacity and 2.133 GHz operation are required.
- Performance-oriented embedded designs — Deploy in designs needing Mobile LPDDR4 technology at 1.1 V supply voltage.
- Temperature-constrained environments — Applicable where components must meet an operating range of −30°C to 85°C (TC).
Unique Advantages
- High capacity: 64 Gbit density supports large volatile memory footprints without multiple devices.
- Wide data organization: 2G × 32 configuration enables wide-interface memory implementations.
- High-speed operation: 2.133 GHz clock frequency provides high-throughput DRAM access.
- Low-voltage operation: 1.1 V supply reduces operating voltage requirements compared to higher-voltage memories.
- Extended temperature range: Rated for −30°C to 85°C (TC) to address temperature-variable applications.
- Manufacturer backing: Supplied by Micron Technology Inc.
Why Choose IC DRAM 64GBIT 2.133GHZ FBGA?
The MT53D2048M32D8QD-046 WT ES:D combines Mobile LPDDR4 architecture with 64 Gbit density and a 2.133 GHz clock to deliver a high-capacity, high-frequency volatile memory option. Its 1.1 V supply and specified −30°C to 85°C (TC) operating range make it a clear match for designs that require these explicit electrical and environmental parameters.
This device is appropriate for engineers and procurement teams looking for a Micron Technology Inc. LPDDR4 memory IC that meets the stated capacity, organization, frequency, voltage, and temperature requirements.
For pricing, availability, or to request a quote for MT53D2048M32D8QD-046 WT ES:D, please submit a request or contact sales for further assistance.
