MT53D2048M32D8QD-062 WT ES:D
| Part Description |
IC DRAM 64GBIT 1.6GHZ FBGA |
|---|---|
| Quantity | 591 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | N/A | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 1.6 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | N/A | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 2G x 32 | ||
| Moisture Sensitivity Level | 1 (Unlimited) | RoHS Compliance | Unknown | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | OBSOLETE | HTS Code | N/A |
Overview of MT53D2048M32D8QD-062 WT ES:D – IC DRAM 64GBIT 1.6GHZ FBGA
The MT53D2048M32D8QD-062 WT ES:D is a 64 Gbit volatile DRAM device using SDRAM Mobile LPDDR4 technology. It is organized as 2G × 32 and operates at a clock frequency of 1.6 GHz with a nominal supply voltage of 1.1 V.
Targeted at mobile memory applications, the device combines high density and high-speed operation with low-voltage operation and an operating temperature range of −30°C to 85°C to address designs that require compact, power-conscious memory solutions.
Key Features
- Technology — Mobile LPDDR4 SDRAM Implements Mobile LPDDR4 SDRAM technology appropriate for mobile-oriented memory architectures.
- Memory Capacity and Organization 64 Gbit total capacity organized as 2G × 32 to support high-density memory configurations.
- High Clock Frequency Operates at 1.6 GHz to support higher-bandwidth memory transfers.
- Low-Voltage Operation 1.1 V supply voltage for reduced power consumption in low-power systems.
- Operating Temperature Range Specified for operation from −30°C to 85°C to accommodate extended ambient conditions.
- Memory Type & Format Volatile DRAM in LPDDR4 format for transient system memory applications.
Typical Applications
- Mobile devices Mobile LPDDR4 technology and 64 Gbit capacity make it suitable for memory subsystems in mobile computing and handheld devices.
- Portable electronics Low-voltage 1.1 V operation and high clock frequency support power-sensitive portable product designs.
- High-density memory modules 2G × 32 organization enables integration into compact, high-capacity memory modules and subsystems.
Unique Advantages
- High-density 64 Gbit capacity: Enables large memory footprints in space-constrained designs.
- 1.6 GHz clock performance: Supports higher-bandwidth memory operations where throughput is required.
- Low-voltage 1.1 V operation: Helps reduce system power consumption in battery-powered applications.
- Mobile LPDDR4 architecture: Aligns with mobile memory design paradigms for integration into mobile-focused systems.
- Extended temperature range: −30°C to 85°C rating broadens usable environmental conditions.
Why Choose IC DRAM 64GBIT 1.6GHZ FBGA?
The IC DRAM 64GBIT 1.6GHZ FBGA (MT53D2048M32D8QD-062 WT ES:D) offers a combination of high density, high clock speed, and low-voltage operation in a Mobile LPDDR4 DRAM device manufactured by Micron Technology Inc. It is positioned for designs that require 64 Gbit of volatile memory with 1.6 GHz operation and a wide operating temperature range.
This device is suited for engineers developing mobile and portable systems who need a compact, power-conscious memory component. Its specifications support straightforward integration into memory subsystems where capacity, bandwidth, and low-voltage operation are primary design drivers.
Request a quote or submit an inquiry to discuss availability and pricing for the MT53D2048M32D8QD-062 WT ES:D.
