MT53D2G32D8QD-046 WT ES:E TR

The MT53D2G32D8QD-046 WT ES:E TR is a volatile DRAM device implementing Mobile LPDDR4 SDRAM architecture. It provides 64 Gbit density arranged as 2G × 32 with a high-speed 2.133 GHz clock and a 1.1 V supply.

This device targets designs that require high-density LPDDR4 memory in a compact FBGA 8DP footprint and supports operation across an extended temperature range from −30°C to 85°C.

Key Features

• Memory Type  Mobile LPDDR4 SDRAM in a volatile DRAM format, designed for systems requiring LPDDR4 architecture.
• Density & Organization  64 Gbit total capacity, organized as 2G × 32 to support wide data bus configurations.
• Performance  Operates at a 2.133 GHz clock frequency for high-throughput memory access.
• Power  1.1 V supply voltage specified for low-voltage LPDDR4 operation.
• Temperature Range  Rated for operation from −30°C to 85°C (TC), suitable for systems requiring extended temperature capability.
• Package  Supplied in an FBGA 8DP package as indicated in the product name.

Typical Applications

• Mobile devices  Provides LPDDR4 memory capacity and bandwidth for mobile system memory subsystems.
• Embedded systems  High-density DRAM option for embedded designs that require compact, low-voltage memory.
• Compact computing modules  Used where a 2G × 32 organization and FBGA package fit constrained module footprints.

Unique Advantages

• High memory density: 64 Gbit capacity enables large memory footprints without multiple devices.
• High-frequency operation: 2.133 GHz clock supports increased data throughput for bandwidth-sensitive tasks.
• Low-voltage operation: 1.1 V supply reduces system power compared to higher-voltage DRAM options.
• Compact package: FBGA 8DP footprint aids in space-constrained board designs.
• Extended temperature support: −30°C to 85°C operation supports deployments in broader environmental conditions.
• Wide bus organization: 2G × 32 arrangement supports wider data paths for system integration.

Why Choose MT53D2G32D8QD-046 WT ES:E TR?

This LPDDR4 DRAM device balances high density, high-speed operation, and low-voltage power to address memory demands in compact systems. Its 64 Gbit capacity and 2.133 GHz clock make it suitable for designs prioritizing throughput and capacity within an FBGA 8DP package.

Designers building mobile and embedded platforms that require scalable, low-voltage LPDDR4 memory with extended temperature capability will find this device aligned with those requirements. The specified electrical and thermal parameters support robust integration into applicable memory subsystems.

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