MT53D4G16D8AL-062 WT:E
| Part Description |
IC DRAM 64GBIT 1.6GHZ SMD |
|---|---|
| Quantity | 886 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | N/A | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 1.6 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | N/A | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 4G x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | OBSOLETE | HTS Code | N/A |
Overview of MT53D4G16D8AL-062 WT:E – IC DRAM 64GBIT 1.6GHZ SMD
The MT53D4G16D8AL-062 WT:E is a 64 Gbit DRAM device based on Mobile LPDDR4 SDRAM technology, designed for surface-mount applications. It delivers high-density, high-frequency volatile memory suitable for designs that require compact, low-voltage DRAM.
Typical target use is in mobile and embedded systems requiring LPDDR4-class memory performance, offering a 1.6 GHz clock frequency and 1.1 V supply for power-efficient operation.
Key Features
- Memory Technology Mobile LPDDR4 SDRAM architecture providing LPDDR4-class volatile memory.
- Density and Organization 64 Gbit capacity organized as 4G × 16 for high-density memory integration.
- Performance 1.6 GHz clock frequency to support high-throughput memory operations.
- Power 1.1 V supply voltage for lower-power operation compared with higher-voltage DRAM types.
- Operating Temperature Rated for operation from −30°C to 85°C, supporting a wide range of environmental conditions.
- Form Factor Supplied as a surface-mount device (SMD) for PCB-level assembly in compact designs.
- Memory Type Volatile DRAM suitable where temporary high-capacity memory is required.
Typical Applications
- Mobile Devices Integration in mobile platforms that utilize Mobile LPDDR4 memory for compact, high-density storage.
- Embedded Systems Use in space-constrained embedded applications requiring volatile high-capacity DRAM.
- High-Bandwidth Memory Buffers Deployment where 1.6 GHz operation and 4G × 16 organization support high-throughput buffering.
Unique Advantages
- High density (64 Gbit): Supports designs that need substantial memory capacity within a small footprint.
- High-frequency operation: 1.6 GHz clocking enables higher data throughput for demanding memory tasks.
- Low-voltage operation: 1.1 V supply reduces power consumption compared with higher-voltage alternatives.
- Wide operating temperature: −30°C to 85°C rating enables use across a broad range of environments.
- SMD form factor: Surface-mount packaging facilitates automated PCB assembly and compact board layouts.
Why Choose MT53D4G16D8AL-062 WT:E?
The MT53D4G16D8AL-062 WT:E positions itself as a high-density, low-voltage LPDDR4 DRAM option for designs that require compact, high-frequency volatile memory. Its 64 Gbit capacity, 4G × 16 organization and 1.6 GHz clock frequency address applications needing substantial temporary storage with efficient power usage.
This device is suitable for engineers specifying Mobile LPDDR4 SDRAM in mobile and embedded system designs where space, power, and thermal range are key considerations. Its combination of density, frequency, and operating temperature range supports scalable, robust memory integration in those designs.
Request a quote or contact sales to discuss availability and pricing for the MT53D4G16D8AL-062 WT:E.
