MT53D512M64D4CR-053 WT ES:D

The MT53D512M64D4CR-053 WT ES:D is a 32 Gbit volatile DRAM device from Micron Technology Inc., implemented in Mobile LPDDR4 SDRAM architecture. It is organized as 512M × 64 and supplied in an FBGA package.

With a clock frequency of 1.866 GHz and a 1.1 V supply, this LPDDR4 DRAM targets mobile and embedded memory subsystems where low-voltage operation and high data rate are required. The device’s specified operating temperature range of -30°C to 85°C supports deployment across a range of environmental conditions.

Key Features

• Memory Core  32 Gbit DRAM implemented as 512M × 64 organization for high-density memory arrays.
• Technology  Mobile LPDDR4 SDRAM architecture suitable for LPDDR4 memory designs.
• Clock / Performance  Specified clock frequency of 1.866 GHz to support high data-rate operation within LPDDR4 systems.
• Power  1.1 V supply voltage enabling low-voltage operation consistent with mobile LPDDR4 requirements.
• Temperature Range  Operating temperature from -30°C to 85°C (TC) for extended environmental operating conditions.
• Package & Format  Supplied in an FBGA package and provided as DRAM (volatile memory format).

Typical Applications

• Mobile devices  Memory subsystem integration in LPDDR4-based smartphones, tablets, and handheld devices that require low-voltage DRAM.
• Portable electronics  High-density memory for compact, power-sensitive consumer and industrial portable products.
• Embedded systems  Onboard DRAM for embedded designs that leverage LPDDR4 architecture and require a 32 Gbit memory option.

Unique Advantages

• High-density memory: 32 Gbit capacity (512M × 64) supports designs requiring large on-board DRAM without multiple devices.
• LPDDR4 architecture: Mobile LPDDR4 technology aligns with modern low-voltage memory interfaces for mobile and embedded platforms.
• Elevated data rate: 1.866 GHz clock frequency supports higher throughput within LPDDR4 design constraints.
• Low-voltage operation: 1.1 V supply enables reduced power consumption relative to higher-voltage DRAM options.
• Extended operating range: -30°C to 85°C operating temperature provides suitability across varied environmental conditions.
• Single-device density: FBGA-packaged 32 Gbit DRAM reduces board-level component count for dense memory implementations.

Why Choose IC DRAM 32GBIT 1.866GHZ FBGA?

The MT53D512M64D4CR-053 WT ES:D offers a combination of high density, LPDDR4 architecture, and low-voltage operation aimed at designers of mobile and embedded memory subsystems. Its 1.866 GHz clocking and 32 Gbit capacity provide a clear option for projects that require substantial on-board DRAM in an FBGA form factor.

Manufactured by Micron Technology Inc., this device is positioned for customers seeking LPDDR4-compatible memory with defined operating temperature and voltage specifications. It is suitable for designers targeting compact, low-power platforms that demand a single-device high-density DRAM solution.

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