MT53D512M64D4HR-053 WT:D TR

IC DRAM 32GBIT 1.866GHZ 366WFBGA
Part Description

IC DRAM 32GBIT 1.866GHZ 366WFBGA

Quantity 781 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package366-WFBGA (12x12.7)Memory FormatDRAMTechnologySDRAM - Mobile LPDDR4
Memory Size32 GbitAccess TimeN/AGradeIndustrial
Clock Frequency1.866 GHzVoltage1.1VMemory TypeVolatile
Operating Temperature-30°C ~ 85°C (TC)Write Cycle Time Word PageN/APackaging366-WFBGA
Mounting MethodVolatileMemory InterfaceN/AMemory Organization512M x 64
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNOBSOLETEHTS Code0000.00.0000

Overview of MT53D512M64D4HR-053 WT:D TR – 32Gbit LPDDR4 DRAM, 1.866 GHz, 366-WFBGA

The MT53D512M64D4HR-053 WT:D TR is a 32 Gbit volatile DRAM device implemented as Mobile LPDDR4 SDRAM. It is organized as 512M × 64 and operates at a clock frequency of 1.866 GHz with a 1.1 V supply.

Packaged in a 366‑WFBGA (12x12.7) and rated for an operating temperature range of −30°C to 85°C, this device targets applications requiring high-density LPDDR4 memory in space-constrained packages with low-voltage operation.

Key Features

  • Memory Architecture: Mobile LPDDR4 SDRAM organized as 512M × 64, providing a total memory size of 32 Gbit for high-density system memory requirements.
  • High-Frequency Operation: Clock frequency of 1.866 GHz to support high-throughput data transfer performance within LPDDR4 specifications.
  • Low-Voltage Supply: 1.1 V supply voltage for reduced power consumption relative to higher-voltage DRAM types.
  • Package: 366‑WFBGA (12x12.7) package case suitable for compact board designs and high-density routing.
  • Temperature Range: Rated for operation from −30°C to 85°C, covering a wide range of commercial and industrial temperature conditions.
  • Memory Format: Volatile DRAM format designed for transient system memory use in LPDDR4 architectures.

Typical Applications

  • Mobile devices: Provides high-density LPDDR4 memory for mobile platforms and handheld electronics where low-voltage operation and compact packaging are important.
  • Compact embedded systems: Suits space-constrained embedded modules that require 32 Gbit DRAM in a 366‑WFBGA package.
  • High-bandwidth modules: Supports system designs needing 1.866 GHz clocking for elevated data throughput in LPDDR4 configurations.

Unique Advantages

  • High memory density: 32 Gbit capacity (512M × 64) enables consolidation of system memory requirements into a single device.
  • Elevated data rate: 1.866 GHz clock frequency supports higher data transfer rates within LPDDR4 systems.
  • Reduced power profile: 1.1 V supply voltage lowers operating power compared with higher-voltage DRAM options.
  • Compact footprint: 366‑WFBGA (12x12.7) package minimizes board area for dense system designs.
  • Wide operating temperature: −30°C to 85°C rating accommodates a broad range of deployment environments.

Why Choose IC DRAM 32GBIT 1.866GHZ 366WFBGA?

The MT53D512M64D4HR-053 WT:D TR positions itself as a high-density, low-voltage LPDDR4 DRAM option for designs that require 32 Gbit of volatile memory in a compact 366‑WFBGA package. Its 1.866 GHz clock capability and 1.1 V supply make it suitable for designs prioritizing higher throughput and reduced power consumption within LPDDR4 architectures.

This device is appropriate for engineers and procurement teams specifying memory for mobile and compact embedded platforms that need verified operating temperature coverage and a standardized LPDDR4 memory organization. Its combination of density, frequency, voltage, and package form factor delivers scalability and integration for space-constrained, high-bandwidth memory subsystems.

Request a quote or submit an inquiry for the MT53D512M64D4HR-053 WT:D TR to discuss availability, pricing, and lead times.

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