MT53D512M64D4NW-053 WT ES:D
| Part Description |
IC DRAM 32GBIT 1.866GHZ 432VFBGA |
|---|---|
| Quantity | 1,305 Available (as of May 26, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
Specifications & Environmental
| Device Package | 432-VFBGA (15x15) | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 1.866 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | 432-VFBGA | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 512M x 64 | ||
| Moisture Sensitivity Level | 1 (Unlimited) | RoHS Compliance | Unknown | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0036 |
Overview of MT53D512M64D4NW-053 WT ES:D – IC DRAM 32GBIT 1.866GHZ 432VFBGA
The MT53D512M64D4NW-053 WT ES:D is a 32 Gbit volatile DRAM device based on Mobile LPDDR4 SDRAM technology. It provides a 512M x 64 memory organization and operates at a clock frequency of 1.866 GHz.
This device targets systems requiring high-density mobile LPDDR4 memory in a compact BGA footprint, offering low-voltage operation and an extended operating temperature range for demanding embedded and mobile environments.
Key Features
- Memory Type and Architecture Mobile LPDDR4 SDRAM in a 512M x 64 organization providing a total density of 32 Gbit.
- Clock Performance Rated for operation at 1.866 GHz to support high-throughput memory transactions.
- Power Low-voltage 1.1 V supply optimized for mobile LPDDR4 designs to reduce system power consumption.
- Package 432-ball VFBGA package in a 15 × 15 mm outline (432-VFBGA) for compact board integration.
- Operating Temperature Specified operating temperature range of −30°C to 85°C (TC) to accommodate a range of environmental conditions.
Typical Applications
- Mobile Devices Provides high-density LPDDR4 memory suitable for mobile device platforms that require compact, low-voltage DRAM.
- Embedded Systems Fits embedded applications where a 32 Gbit LPDDR4 memory solution in a small package is required.
- Consumer Electronics Applicable to consumer products needing high-density, low-voltage DRAM with a compact BGA footprint.
Unique Advantages
- High Density — 32 Gbit: Delivers large memory capacity from a single device using a 512M × 64 organization.
- High-Speed Operation: 1.866 GHz clock frequency supports higher data throughput for memory-intensive tasks.
- Low-Voltage Operation: 1.1 V supply reduces power draw for mobile and battery-powered systems.
- Compact BGA Package: 432-VFBGA (15 × 15 mm) package enables dense PCB layouts and space-efficient integration.
- Extended Temperature Range: Rated from −30°C to 85°C (TC) to support a variety of operating environments.
Why Choose IC DRAM 32GBIT 1.866GHZ 432VFBGA?
The MT53D512M64D4NW-053 WT ES:D from Micron Technology Inc. positions itself as a high-density, high-speed LPDDR4 memory option for designs requiring a compact package and low-voltage operation. Its combination of 32 Gbit capacity, 1.866 GHz clocking, 1.1 V supply, and 432-VFBGA packaging makes it appropriate for mobile and embedded designs where board space and power are constrained.
This device is suited to customers integrating large-capacity LPDDR4 memory into compact systems and seeking stable operation across a broad temperature range. Its specification set supports scalable memory implementations in space-constrained, low-voltage designs.
If you need pricing, availability, or a formal quote for the MT53D512M64D4NW-053 WT ES:D, please submit a quote request or contact sales for further information.
