MT53D512M64D4NW-046 WT:D
| Part Description |
IC DRAM 32GBIT 2.133GHZ 432VFBGA |
|---|---|
| Quantity | 1,329 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 28 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 432-VFBGA (15x15) | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 2.133 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | 432-VFBGA | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 512M x 64 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0036 |
Overview of MT53D512M64D4NW-046 WT:D – IC DRAM 32GBIT 2.133GHZ 432VFBGA
The MT53D512M64D4NW-046 WT:D is a 32 Gbit mobile SDRAM device based on LPDDR4 technology, manufactured by Micron Technology Inc. It implements a 512M x 64 memory organization and operates at a clock frequency of 2.133 GHz.
Designed for systems that require high-density mobile DRAM in a compact package, this device offers high-speed operation at a 1.1 V supply and is supplied in a 432-ball very fine-pitch BGA (15×15) package with an operating temperature range of −30°C to 85°C (TC).
Key Features
- Memory Core 32 Gbit DRAM organized as 512M × 64, providing high memory density in a single package.
- Technology Mobile LPDDR4 SDRAM architecture suitable for low-power mobile memory applications.
- Performance Rated for a clock frequency of 2.133 GHz to support high-throughput memory access patterns.
- Power 1.1 V supply voltage characteristic of LPDDR4 low-voltage operation.
- Package 432‑VFBGA package, 15×15 mm footprint, enabling compact board integration.
- Temperature Range Specified operating temperature range of −30°C to 85°C (TC) for a broad set of thermal environments.
- Memory Type Volatile DRAM format intended for dynamic main or system memory applications.
Typical Applications
- Mobile Devices High-density LPDDR4 memory for mobile platforms that require compact, low-voltage DRAM.
- Embedded Systems Systems needing a 32 Gbit volatile memory option in a 15×15 mm BGA footprint.
- High-Bandwidth Memory Subsystems Designs that leverage 2.133 GHz clocking for demanding data throughput requirements.
Unique Advantages
- High Density in a Small Package: 32 Gbit capacity in a 432‑VFBGA (15×15) package reduces board area for space-constrained designs.
- Low-Voltage Operation: 1.1 V supply supports reduced power consumption relative to higher-voltage memories.
- High Clock Rate: 2.133 GHz operation enables higher data rates for bandwidth-sensitive applications.
- Standard LPDDR4 Architecture: Mobile LPDDR4 SDRAM technology provides a familiar architecture for designs targeting low-power mobile memory.
- Wide Operating Temperature: −30°C to 85°C (TC) rating accommodates a range of thermal environments.
Why Choose IC DRAM 32GBIT 2.133GHZ 432VFBGA?
The MT53D512M64D4NW-046 WT:D positions itself as a high-density LPDDR4 DRAM component offering 32 Gbit capacity, 2.133 GHz clocking, and 1.1 V operation in a compact 432-VFBGA (15×15) package. These characteristics make it suitable for designs where board space, memory capacity, and low-voltage operation are key considerations.
This device is appropriate for engineers and procurement teams specifying mobile LPDDR4 memory for mobile and embedded platforms that require verifiable density, defined thermal range, and a small BGA footprint from a recognized manufacturer.
Request a quote or contact sales to discuss availability, lead times, and pricing for MT53D512M64D4NW-046 WT:D.
